Enhanced emission efficiency of GaN∕InGaN multiple quantum well light-emitting diode with an embedded photonic crystal

Abstract

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Elimination of total internal reflection in GaInN light-emitting diodes by graded-refractive-index micropillars

“…1 Light incident on a planar semiconductor-air or semiconductorencapsulant interface is totally internally reflected if the angle of incidence is larger than a particular angle called critical angle c , resulting in a significant reduction in lightextraction efficiency. In order to extract more light from LEDs, efforts have been ongoing for several decades that included wet-chemical texturing of a LED surface, 2-6 employing periodic photonic crystals, 7,8 planar gradedrefractive-index ͑GRIN͒ antireflection coatings, 9 patterning of sapphire substrates, 10 and shaping of LED chips. 11 Wet-chemical texturing of an N-face GaN ͑0001͒ surface of vertical-structured LEDs is known to be very efficient in enhancing light extraction and, hence, is widely used in highpower commercial LEDs.…”

Temperature dependence of photoluminescence from as-grown and plasma-etched InAs0.45P0.55/In0.68Ga0.32As0.45P0.55 strained single quantum well

“…Even though ICP-introduced structural damage may exist in semiconductors, tremendous efforts have been devoted to minimized or recovery the damage [5,6]. The performance of some optoelectronic devices such as light emitting diodes (LEDs) can even be enhanced due to the improved light extraction efficiency after ICP etching [7,8].…”

Optimization of hydrothermal growth ZnO Nanorods for enhancement of light extraction from GaN blue LEDs

“…Though commercial LEDs are available, achieving high efficiencies is still one of the biggest challenges for GaN-based optoelectronic devices. The efficiency of InGaN-based LEDs is dependent on the internal quantum efficiency (Z int ) and the light extraction efficiency (Z extr ) [2]. The internal quantum efficiency is affected by its crystal quality and the built-in electric field arising from spontaneous and straininduced piezoelectric polarization which decreases the overlap of the electron and hole wavefunctions in the quantum wells [3,4].…”