Enhanced emission from mid-infrared AlInSb light-emitting diodes with p-type contact grid geometry

Meriggi, Laura; Steer, Matthew J.; Ding, Ying; Thayne, Iain; MacGregor, Calum; Ironside, C. N.; Sorel, Marc

doi:10.1063/1.4905081

Cited by 23 publications

(16 citation statements)

References 25 publications

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“…There is continuous worldwide interest in the development of light sources and detectors for the mid-infrared (2-5 µm) spectral range driven by the extensive range of potential applications, including environmental gas monitoring, noninvasive medical diagnosis, tunable infrared spectroscopy and free space optical communications. A number of different semiconductor materials and devices are currently being investigated including bulk AlInSb alloys 1 , InGaAsSb/AlGaInAsSb quantum wells (QWs) 2 and InAs/GaSb superlattices 3 . Using quantum dots (QDs) in the active region of mid-infrared devices could offer significant advantages.…”

Section: Introductionmentioning

confidence: 99%

InSb-based quantum dot nanostructures for mid-infrared photonic devices

Carrington

Repiso

et al. 2016

SPIE Proceedings

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Novel InSb quantum dot (QD) nanostructures grown by molecular beam epitaxy (MBE) are investigated in order to improve the performance of light sources and detectors for the technologically important mid-infrared (2-5 µm) spectral range. Unlike the InAs/GaAs system which has a similar lattice mismatch, the growth of InSb/InAs QDs by MBE is a challenging task due to Sb segregation and surfactant effects. These problems can be overcome by using an Sb-As exchange growth technique to realize uniform, dense arrays (dot density ~10 12 cm-2) of extremely small (mean diameter ~2.5 nm) InSb submonolayer QDs in InAs. Light emitting diodes (LEDs) containing ten layers of InSb QDs exhibit bright electroluminescence peaking at 3.8 µm at room temperature. These devices show superior temperature quenching compared with bulk and quantum well (QW) LEDs due to a reduction in Auger recombination. We also report the growth of InSb QDs in InAs/AlAsSb 'W' QWs grown on GaSb substrates which are designed to increase the electron-hole (e-h) wavefunction overlap to ~75%. These samples exhibit very good structural quality and photoluminescence peaking near 3.0 μm at low temperatures.

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Section: Introductionmentioning

confidence: 99%

InSb-based quantum dot nanostructures for mid-infrared photonic devices

Carrington

Repiso

et al. 2016

SPIE Proceedings

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“…The disadvantages with MCT are that it is fragile, has low process uniformity, is not easily integrated with Si and the toxic elements have been banned for use in civilian products in Europe. InSb gas detectors are now available in the 3 to 5 µm window but the material is fragile and difficult to process [2]. This paper will discuss two potential routes for detection based on the Ge on Si material platform.…”

Section: Introductionmentioning

confidence: 99%

Ge-on-Si Photonics for Mid-infrared Sensing Applications

et al. 2016

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There is significant interest to develop cheap CMOS compatible sensors that operate in the mid-infrared (MIR). To meet these requirements, Ge-on-Si is proving to be an exciting platform. There is the potential to realize waveguide integrated quantum well infrared photodetectors (QWIPs) based on Ge quantum wells (QWs). Intersubband absorption from p-Ge QWs has been demonstrated in the important atmospheric transmission window of 8-13 μm. An alternative strategy for sensing in the MIR is demonstrated through highly n-type doped Ge plasmonic antennas. These antennas demonstrate vibrational sensing of polydimethylsiloxane (PDMS) spin coated layers at 12.5 μm wavelength. These demonstrate enhanced sensing capabilities due to the localized hot spots of the antenna resonant modes

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“…Standard epilayer designs for LEDs employ a homojunction active region in combination with a relatively wide bandgap barrier between the active region and p-doping layer to reduce carrier leakage [1,3,4]. However, the carrier leakage in a homojunction design is still a major problem because of the efficiency droop under a high current density [5]. Here, we report on an investigation of multiple quantum well (MWQ) heterostructures as a means of increasing the efficiency of the mid-IR LEDs.…”

Section: Introductionmentioning

confidence: 99%

An investigation of MWIR, AlInSb LEDs based on double heterostructures and multiple quantum wells

Ding

Meriggi

Steer

et al. 2014

2014 Conference on Optoelectronic and Microelectronic Materials &Amp; Devices

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Abstract-Mid-infrared LEDs based on AlInSb double heterostrucutre and multiple quantum well active regions have been simulated and investigated using the SimuLED software package from STR. The simulation results indicate that the double heterostrucutre and multiple quantum well active regions offer higher carrier injection efficiency and energy conversion. This translates into an output power and wall-plug efficiency that are three and two times higher, respectively, than a conventional homojunction active region.

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Enhanced emission from mid-infrared AlInSb light-emitting diodes with p-type contact grid geometry

Abstract: Structural and interface properties of an AlN diamond ultraviolet light emitting diode

Cited by 23 publications

References 25 publications

InSb-based quantum dot nanostructures for mid-infrared photonic devices

InSb-based quantum dot nanostructures for mid-infrared photonic devices

Ge-on-Si Photonics for Mid-infrared Sensing Applications

An investigation of MWIR, AlInSb LEDs based on double heterostructures and multiple quantum wells

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