Enhanced Energy-Storage Performance of an All-Inorganic, Antiferroelectric, Thin-Film via Orientation Adjustments

Abstract

An all-inorganic Pb0.99Nb0.02(Zr0.85Sn0.13Ti0.02)0.98O3 (PNZST) antiferroelectric (AFE) thin film was designed to enhance its energy-storage performance by adjusting its orientation. Using a radio frequency (RF) magnetron sputtering technology, 450-nm-PNZST AFE films with (111), (110), and (100) crystal orientations were successfully prepared. All the films showed a dense microstructure and the highly preferred orientations were determined by the orientation of the bottom electrodes. Moreover, the preferred orientation of the AFE thin film had a great influence on the dielectric and energy-storage properties. Meanwhile, the energy storage density of the PNZST AFE thin film with the (100) orientation reached 33.7 J cm-3 , which was 43 % higher than that of PNZST AFE thin film with a (111) orientation. All of these results shed light on how the energy-storage performance of PNZST AFE thin films can be enhanced and optimized by adjusting its orientation. This offers a new strategy and innovation, which opens up a route to practical applications in micro-energy-storage systems. INDEX TERMS Orientation, antiferroelectric thin film, energy-storage.

Orientation-tunable ferroelectric and energy storage properties in PMN–PT single crystals

“…This method enables us to deeply understand the influence of changes in phase structure and domain on macroscopic performance. 14–18 For example, the largest energy storage density (13.5 J cm −3 ) at room temperature was obtained in the (Pb 0.97 La 0.02 )(Zr 0.73 Sn 0.22 Ti 0.05 )O 3 films using (111) orientation compared with (110) and (100) oriented films. 19…”

Remarkable flexibility in freestanding single-crystalline antiferroelectric PbZrO3 membranes

“…They also exhibit a large electric polarization response at the high electric field and weak remnant polarization at the zero field. Those characteristics make them suitable for a wide range of applications in actuation, energy storage [10][11][12] , memory devices 13 , solid-state refrigeration 14 and thermal switches 15 , etc. These extraordinary performances are usually achieved in AFE single-crystals or AFE epitaxial thin films.…”