Enhanced excitation efficiency of Eu ions in Eu-doped GaN/AlGaN multiple quantum well structures grown by organometallic vapor phase epitaxy

Arai, Takanori; Timmerman, Dolf; Wakamatsu, Ryuta; Lee, D.; Koizumi, Akira; Fujiwara, Yoshihiro

doi:10.1016/j.jlumin.2014.09.036

Cited by 22 publications

(20 citation statements)

References 15 publications

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“…The light output of the 1.54 µm LED with MQWs:Er active layer is 4 times higher than that of the 1.54 µm LED with GaN:Er active layer at I > 20 mA. A three times enhancement was reported for MQW:Eu structures [28]. The light output is significantly enhanced when replacing GaN:Er active layer with MQWs:Er active layer.…”

Section: Methodsmentioning

confidence: 83%

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Current injection 154 µm light-emitting devices based on Er-doped GaN/AlGaN multiple quantum wells

Tahtamouni

Lin

et al. 2016

Opt. Mater. Express

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We report on the growth, fabrication and electroluminescence (EL) characteristics of light-emitting diodes (LEDs) based on Er-doped GaN (GaN:Er) and GaN/AlGaN multiple quantum well (MQW:Er) active layers. The LED structures were grown using metal organic chemical vapor deposition and processed into 300x300 µm 2 mesa devices. The LEDs exhibit emission at 1.54 µm, due to Er intra-4f transitions, under forward bias conditions. The 1.54 µm emission properties from LEDs with MQWs:Er and GaN:Er active layers were probed. The LEDs fabricated using MQWs:Er exhibited improved performance as evidenced by a factor of 4 enhancement in the optical power output as compared to conventional GaN:Er based LEDs. The results demonstrate a significant advance in the development of current injected, chip-scale emitters and waveguide amplifiers based on Er doped semiconductors.

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Section: Methodsmentioning

confidence: 83%

“…The forward voltage at 20 mA for the LED with MQWs:Er (13.5 V) is higher than that of LED with GaN:Er (8.6 V). The relatively high forward voltage observed in the MQWs:Er LED is related to the high series resistance introduced by the high resistivity of the Al 0.10 Ga 0.90 N barriers [27,28].…”

Section: Methodsmentioning

confidence: 99%

Current injection 154 µm light-emitting devices based on Er-doped GaN/AlGaN multiple quantum wells

Tahtamouni

Lin

et al. 2016

Opt. Mater. Express

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“…[1][2][3][4] As such, GaN has been recognized as an excellent host for RE doping. [4][5][6][7] In particular, the erbium (Er) doped GaN (Er:GaN) has been extensively studied. [8][9][10][11][12][13][14] Er:GaN is a very promising gain material for optical amplifiers 15 and high energy lasers 16 due to its emission at the wavelength of 1.5 lm, which coincides with the wavelength of lowest attenuation in silica optical fibers, [17][18][19] and it has high transmission in the atmosphere, 20 and has a relatively high upper limit of eye-safe laser exposure.…”

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confidence: 99%

Enhancement of 1.5 μm emission under 980 nm resonant excitation in Er and Yb co-doped GaN epilayers

Wang

Lin

et al. 2016

Applied Physics Letters

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The Erbium (Er) doped GaN is a promising gain medium for optical amplifiers and solid-state high energy lasers due to its high thermal conductivity, wide bandgap, mechanical hardness, and ability to emit in the highly useful 1.5 lm window. Finding the mechanisms to enhance the optical absorption efficiency at a resonant pump wavelength and emission efficiency at 1.5 lm is highly desirable. We report here the in-situ synthesis of the Er and Yb co-doped GaN epilayers (Er þ Yb:GaN) by metal-organic chemical vapor deposition (MOCVD). It was observed that the 1.5 lm emission intensity of the Er doped GaN (Er:GaN) under 980 nm resonant pump can be boosted by a factor of 7 by co-doping the sample with Yb. The temperature dependent PL emission at 1.5 lm in the Er þ Yb:GaN epilayers under an above bandgap excitation revealed a small thermal quenching of 12% from 10 to 300 K. From these results, it can be inferred that the process of energy transfer from Yb 3þ to Er 3þ ions is highly efficient, and non-radiative recombination channels are limited in the Er þ Yb:GaN epilayers synthesized in-situ by MOCVD. Our results point to an effective way to improve the emission efficiency of the Er doped GaN for optical amplification and lasing applications.

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“…21 The electric field acting upon charge carriers leads to their spatial separation and thus restrict formation of excitons which are necessary for excitation of the 4f-shell of Er 3þ ions. 14 that built-in electric fields are detrimental for recombination efficiency in polar GaN/AlGaN quantum structures, particularly for wells thickness higher than free exciton Bohr radius. Therefore, reduction of the Er emission efficiency will be stronger in wide GaN QWs, in agreement with the experimental data in Fig.…”

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confidence: 99%

Dramatic enhancement of 1.54 μm emission in Er doped GaN quantum well structures

Tahtamouni

Stachowicz

et al. 2015

Applied Physics Letters

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Erbium (Er) doped III-nitride materials have attracted much attention due to their capability to provide highly thermal stable optical emission in the technologically important as well as eye-safer 1540 nm wavelength window. There is a continued need to exploring effective mechanisms to further improve the quantum efficiency (QE) of the 1.54 lm emission in Er-doped III-nitrides. GaN/ AlN multiple quantum wells (MQWs:Er) have been synthesized by metal organic chemical vapor deposition and explored as an effective means to improve the QE of the 1.54 lm emission via carrier confinement and strain engineering. The 1.54 lm emission properties from MQWs:Er were probed by photoluminescence (PL) emission spectroscopy. It was found that the emission intensity from MQWs:Er is 9 times higher than that of GaN:Er epilayers with a comparable Er active layer thickness. The influences of the well and barrier width on the PL emission at 1.54 lm were studied. The results revealed that MQWs:Er consisting of well width between 1 and 1.5 nm and the largest possible barrier width before reaching the critical thickness provide the largest boost in QE of the 1.54 lm emission. These results demonstrate that MQWs:Er provide a basis for efficient photonic devices active at 1.54 lm. V

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Enhanced excitation efficiency of Eu ions in Eu-doped GaN/AlGaN multiple quantum well structures grown by organometallic vapor phase epitaxy

Cited by 22 publications

References 15 publications

Current injection 154 µm light-emitting devices based on Er-doped GaN/AlGaN multiple quantum wells

Current injection 154 µm light-emitting devices based on Er-doped GaN/AlGaN multiple quantum wells

Enhancement of 1.5 μm emission under 980 nm resonant excitation in Er and Yb co-doped GaN epilayers

Dramatic enhancement of 1.54 μm emission in Er doped GaN quantum well structures

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