Enhanced exciton photoluminescence in the selectively Si-doped GaAs/AlxGa1−xAs heterostructures

Kundrotas, J.; Čerškus, Aurimas; Nargelienė, Viktorija; Sužiedėlis, Algirdas; Ašmontas, Steponas; Gradauskas, Jonas; Johannessen, Agne; Johannessen, Erik; Umansky, V.

doi:10.1063/1.3483240

Cited by 10 publications

(13 citation statements)

References 74 publications

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“…Similar effects were observed in Si-doped n + /n-GaAs homojunction structures [19], Si δ-doped GaAs structures [20], in selectively Sidoped GaAs/AlGaAs heterostructures [21] as well as in AlInN/GaN heterostructures [22]. Theoretical calculations show that a strong electric field is induced in all of these structures at the interface side of the active layer.…”

Section: Discussionsupporting

confidence: 59%

Photoluminescence lifetimes in GaAs/Al0.3Ga0.7As structures designed for microwave and terahertz detectors

Čerškus¹,

Kundrotas²,

Nargelienė³

et al. 2013

Lith. J. Phys.

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This paper presents the photoluminescence spectra and light emission lifetimes in GaAs/Al 0.3 Ga 0.7 As structures designed for microwave and terahertz detectors. The photoluminescence and light emission lifetimes were investigated both before and after etching of the cap-layers, and possible mechanisms of carrier recombination are discussed. The characteristic time of the free exciton emission corresponds to 0.5 ns at a temperature of 3.6 K. The recombination lifetime of the free electron acceptor was measured to be 22-25 ns in GaAs structures and 4-15 ns in AlGaAs structures. The emission lifetime of deep Si level having 170 meV activation energy in AlGaAs layer was found to be equal to 40 ns. The excitonic photoluminescence maxima of n + /n-GaAs and n + /n-Al 0.3 Ga 0.7 As homojunction structures in comparison to n-GaAs and n-Al 0.3 Ga 0.7 As were shifted by approximately 200 ps. This suggested that the drift of free carriers is important in the formation of free excitons in n-GaAs and n-Al 0.3 Ga 0.7 As layers.

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Section: Discussionsupporting

confidence: 59%

Photoluminescence lifetimes in GaAs/Al0.3Ga0.7As structures designed for microwave and terahertz detectors

Čerškus¹,

Kundrotas²,

Nargelienė³

et al. 2013

Lith. J. Phys.

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“…Two phenomena were ob served: (i) the amplification and (ii) the narrowing of the excitonic line in the n + /iGaAs homojunc tion. Similar effects were observed in Si δdoped GaAs structures [72], in the selectively Sidoped GaAs/AlGaAs heterostructures [60] and also in the AlInN/GaN heterostructures [73]. A high electric field forms at the interfaces from the active layer side in all these structures.…”

Section: The Enhancement Of Pl In Semiconductor Homo-and Heterojunctionssupporting

confidence: 58%

“…It is known that the highest metal enhancement of emission is achieved with a low efficiency emis sion of molecules. However, in our case the highest enhancement of PL was observed in the structures with the highest quality of active GaAs layer in GaAs/Al x Ga 1x As heterojuctions [60].…”

Section: The Enhancement Of Pl In Semiconductor Homo-and Heterojunctionsmentioning

confidence: 73%

“…This gas may create a strong electric field that is capable of quenching potential recombinations that occur at the interface. The recombination is thus shifted to the flat band region where an enhancement of the emission can be realized [60]. This shows that the physics governing the emission enhancement in metal-semiconductor nanostructures is an inher ent complicated phenomenon.…”

Section: Metal-semiconductor Composite Enhanced Emissionmentioning

confidence: 92%

“…Thus, we can conclude that the builtin electric field and the enhancement of the excitonic emission are related phenomena. The enhancement was reported to span up to 3 orders of magnitude in the selectively doped GaAs/Al x Ga 1x As heterojunction structures [60].…”

Section: The Enhancement Of Pl In Semiconductor Homo-and Heterojunctionsmentioning

confidence: 99%

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Enhanced light emission in nanostructures

Kundrotas¹,

Čerškus²,

Nargelienė³

et al. 2011

Lith. J. Phys.

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The enhancement of light emissive processes in different quantum nanometric systems is presented in this review. The plasmonic enhanced photoluminescence (fluorescence) of metals and metal nanoparticles, molecules and semiconductor nanostructures, as well as surface-enhanced Raman scattering is initially considered. The enhancement of excitonic photoluminescence intensity in semiconductor confined systems such as quantum wells, quantum wires and quantum dots, and microcavities are then discussed. Finally, the experimental results of the enhanced exciton photoluminescence from GaAs homojunctions, δ-doped GaAs structures, GaAs/AlGaAs selectively doped and AlInN/GaN heterostuctures is presented. These results can be applied to enhance the emission of light-emitting diodes, as well as to increase the efficiency of solar cells.

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Photoluminescence and the gallium problem for highest-mobility GaAs/AlGaAs-based 2d electron gases

Schläpfer

Dietsche

Reichl

et al. 2016

Journal of Crystal Growth

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The quest for extremely high mobilities of 2d electron gases in MBE-grown heterostructures is hampered by the available purity of the starting materials, particularly of the gallium. Here we compare the role of different Ga lots having nominally the highest possible quality on the mobility and the photoluminescence (PL) of modulation doped single interface structures and find significant differences. A weak exciton PL reveals that the purity of the Ga is insufficient. No high mobility can be reached with such a lot with a reasonable effort. On the other hand, a strong exciton PL indicates a high initial Ga purity, allowing to reach mobilities of 15 million (single interface) or 28 million cm 2 /V sec (doped quantum wells) in our MBE systems. We discuss possible origins of the inconsistent Ga quality. Furthermore, we compare samples grown in different MBE systems over a period of several years and find that mobility and PL is correlated if similar structures and growth procedures are used.

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Enhanced exciton photoluminescence in the selectively Si-doped GaAs/AlxGa1−xAs heterostructures

Cited by 10 publications

References 74 publications

Photoluminescence lifetimes in GaAs/Al<sub>0.3</sub>Ga<sub>0.7</sub>As structures designed for microwave and terahertz detectors

Photoluminescence lifetimes in GaAs/Al<sub>0.3</sub>Ga<sub>0.7</sub>As structures designed for microwave and terahertz detectors

Enhanced light emission in nanostructures

Photoluminescence and the gallium problem for highest-mobility GaAs/AlGaAs-based 2d electron gases

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