Enhanced Fabry-Perot resonance in GaAs nanowires through local field enhancement and surface passivation

Arab, Shermin; Anderson, Patrick D.; Yao, Maoqing; Zhou, Chongwu; Dapkus, P.D.; Povinelli, Michelle L.; Cronin, Stephen B.

doi:10.1007/s12274-014-0477-0

Cited by 17 publications

(25 citation statements)

References 24 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…2 shows vertically erected Mn doped ZnO NRs with uniform axial dimensions. Even though, the distribution of NRs is random, there exists a Fabry-Perot-like localized resonance due to small-scale ordering within the architecture which results in local enhancement of field 35 . In addition to the creation of defect states (within band gap of ZnO), this local field enhancement leads to increase in NLO interactions and hence, higher values for n 2 and.…”

Section: Introductionmentioning

confidence: 99%

Defect-assisted saturable absorption characteristics in Mn doped ZnO nano-rods

et al. 2015

View full text Add to dashboard Cite

We have investigated the manifestations due to Manganese (Mn)-doping in ZnO sub-wavelength rods (or nanorods) on its nonlinear optical properties, namely two-photon absorption (TPA) and nonlinear refraction using single-beam Zscan technique. Mn-doped ZnO nanorods (NRs) were prepared by low temperature aqueous growth technique. The results show that Mn-doping concentration primarily determines whether ZnO NRs would exhibit saturable absorption (SA) or two-photon-absorption (TPA) characteristics in an openaperture experiment. At high Mn-doping concentrations, ZnO NRs exhibit SA behaviour which could be attributed to high occupation probability of defects states as well as saturation of linear absorption of subwavelength rod aggregates at high optical fluence. In contrast to high Mn-doping concentration in ZnO NRs, we observed TPA feature in 0.5% Mn-doped ZnO NRs. The employability of such structures in the area of optical limiting and switching is essentially derived from the possibility to tune the nonlinear optical absorption which could be realized by appropriate Mn-doping in ZnO NR architecture.

show abstract

Section: Introductionmentioning

confidence: 99%

Defect-assisted saturable absorption characteristics in Mn doped ZnO nano-rods

et al. 2015

View full text Add to dashboard Cite

show abstract

“…Photoluminescence spectroscopy is collected using a 532 nm continuous-wave laser. 32 Figure 1 shows SEM micrographs of a GaAs nanowire array and individual GaAs nanowires deposited on a Si/SiO 2 substrate. These nanowires are doped with Si, where Si behaves as a donor.…”

mentioning

confidence: 99%

Doping concentration dependence of the photoluminescence spectra of n-type GaAs nanowires

Arab

Yao

Zhou

et al. 2016

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

In this letter, the photoluminescence spectra of n-type doped GaAs nanowires, grown by the metal organic chemical vapor deposition method, are measured at 4 K and 77 K. Our measurements indicate that an increase in carrier concentration leads to an increase in the complexity of the doping mechanism, which we attribute to the formation of different recombination centers. At high carrier concentrations, we observe a blueshift of the effective band gap energies by up to 25 meV due to the Burstein-Moss shift. Based on the full width at half maximum (FWHM) of the photoluminescence peaks, we estimate the carrier concentrations for these nanowires, which varies from 6 × 1017 cm−3 (lightly doped), to 1.5 × 1018 cm−3 (moderately doped), to 3.5 × 1018 cm−3 (heavily doped) as the partial pressure of the disilane is varied from 0.01 sccm to 1 sccm during the growth process. We find that the growth temperature variation does not affect the radiative recombination mechanism; however, it does lead to a slight enhancement in the optical emission intensities. For GaAs nanowire arrays measured at room temperature, we observe the same general dependence of band gap, FWHM, and carrier concentration on doping.

show abstract

“…However, the FP modes supported by the nanocavity structure have relatively small quality factor because of the small difference of the refractive indices of the substrate and the NWs. In order to address this issue, Bragg gratings can be produced at the NW ends, alternatively, NWs can be placed on metal substrates in order to increase the FP resonance peak intensity by more than one order of magnitude compared to those on Si substrates [104]. …”

Section: Fabry-perot Resonant Modesmentioning

confidence: 99%

Nanowire Optoelectronics

Wang

Nabet

2015

Nanophotonics

View full text Add to dashboard Cite

Semiconductor nanowires have been used in a variety of passive and active optoelectronic devices including waveguides, photodetectors, solar cells, light-emitting diodes (LEDs), lasers, sensors, and optical antennas. We review the optical properties of these nanowires in terms of absorption, guiding, and radiation of light, which may be termed light management. Analysis of the interaction of light with long cylindrical/hexagonal structures with subwavelength diameters identifies radial resonant modes, such as Leaky Mode Resonances, or Whispering Gallery modes. The two-dimensional treatment should incorporate axial variations in "volumetric modes," which have so far been presented in terms of Fabry-Perot (FP), and helical resonance modes. We report on finite-difference timedomain (FDTD) simulations with the aim of identifying the dependence of these modes on geometry (length, width), tapering, shape (cylindrical, hexagonal), core-shell versus core-only, and dielectric cores with semiconductor shells. This demonstrates how nanowires (NWs) form excellent optical cavities without the need for top and bottom mirrors. However, optically equivalent structures such as hexagonal and cylindrical wires can have very different optoelectronic properties meaning that light management alone does not sufficiently describe the observed enhancement in upward (absorption) and downward transitions (emission) of light in NWs; rather, the electronic transition rates should be considered. We discuss this "rate management" scheme showing its strong dimensional dependence, making a case for photonic integrated circuits (PICs) that can take advantage of the confluence of the desirable optical and electronic properties of these nanostructures.

show abstract

Enhanced Fabry-Perot resonance in GaAs nanowires through local field enhancement and surface passivation

Cited by 17 publications

References 24 publications

Defect-assisted saturable absorption characteristics in Mn doped ZnO nano-rods

Defect-assisted saturable absorption characteristics in Mn doped ZnO nano-rods

Doping concentration dependence of the photoluminescence spectra of n-type GaAs nanowires

Nanowire Optoelectronics

Contact Info

Product

Resources

About