Enhanced Ferroelectric, Dielectric Properties of Fe-Doped PMN-PT Thin Films

Abstract

Fe-doped 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) thin films were grown in Pt/Ti/SiO2/Si substrate by a chemical solution deposition method. Effects of the annealing temperature and doping concentration on the crystallinity, microstructure, ferroelectric and dielectric properties of thin film were investigated. High (111) preferred orientation and density columnar structure were achieved in the 2% Fe-doped PMN-PT thin film annealed at 650 °C. The preferred orientation was transferred to a random orientation as the doping concentration increased. A 2% Fe-doped PMN-PT thin film showed the effectively reduced leakage current density, which was due to the fact that the oxygen vacancies were effectively restricted and a transition of Ti4+ to Ti3+ was prevented. The optimal ferroelectric properties of 2% Fe-doped PMN-PT thin film annealed at 650 °C were identified with slim polarization-applied field loops, high saturation polarization (Ps = 78.8 µC/cm2), remanent polarization (Pr = 23.1 µC/cm2) and low coercive voltage (Ec = 100 kV/cm). Moreover, the 2% Fe-doped PMN-PT thin film annealed at 650 °C showed an excellent dielectric performance with a high dielectric constant (εr ~1300 at 1 kHz).

Editorial for the Special Issue “Nanoscale Ferroic Materials—Ferroelectric, Piezoelectric, Magnetic, and Multiferroic Materials”

“…Among the studies about Hf x Zr 1-x O 2 , the work in this study showed relatively good remanent polarization and fatigue endurance performances despite being under the lowest deposition temperature. Feng et al [ 2 ] focus their work on the effects of annealing temperature and Fe-doping concentration on the crystallinity, microstructure, ferroelectric and dielectric properties of PMN-PT thin films. 2% Fe-doped PMN-PT thin film annealed at 650 °C exhibits high (111) preferred orientation, high remanent polarization ( P r = 23.1 μC/cm 2 ) and low coercive voltage (Ec = 100 kV/cm).…”