Enhanced Field Emission from Diamond Coated Molybdenum Emitters

Choi, Wonbong; McClure, M. T.; Schlesser, R.; Sitar, Zlatko; Hren, J. J.

doi:10.1051/jp4:1996515

Cited by 2 publications

(2 citation statements)

References 7 publications

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“…3͒. 7,8 The irregular morphology of Mo 2 C carbide particles formed at the interface could be responsible for an increased local field. These results are comparable to similar data presented earlier.…”

Section: A I -V Characteristicsmentioning

confidence: 99%

Electron energy distribution of diamond-coated field emitters

Choi¹

1998

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inThe 3D-tomography of the nano-clusters formed by Fe-coating and annealing of diamond films for enhancing their surface electron field emitters AIP Advances 2, 032153 (2012); 10.1063/1.4748865 Nanocrystalline silicon electron emitter with a high efficiency enhanced by a planarization technique Field emission energy distribution analysis of cubic-BN-coated Mo emitters: Nonlinear behaviorThe influence of metal/diamond interfacial nanostructure and diamond surface treatment on electron emission from diamond-coated Mo emitters is presented. Diamond coatings are known to enhance electron emissivity but may do so at the interfacial barrier and/or the surface barrier, since both influence the magnitude of the current. Prior to annealing the energy distribution of the emitted electrons exhibits a linear displacement in peak position with applied voltage. After annealing in a hydrogen plasma at 600°C, emission is further enhanced and the magnitude of the peak shift with applied voltage is reduced. A further oxygen plasma treatment yields an intermediate dependence of peak shift with voltage. The effects of hydrogen plasma annealing appear closely related to changes in the nanostructure at the Mo/diamond interface. During annealing Mo 2 C particles are formed while both molybdenum oxides and an amorphous layer present on the original diamond particles are removed. The smaller voltage drop after the oxygen plasma treatment is thought to be due to the removal of passivating hydrogen as well as to a change in the surface barrier of the diamond. The energy barrier of the diamond/vacuum interface plays only a minor role in the voltage drop.

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Section: A I -V Characteristicsmentioning

confidence: 99%

Electron energy distribution of diamond-coated field emitters

Choi¹

1998

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

Self Cite

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“…[1][2][3][4][5] Apart from their excellent properties such as good thermal conductivity, chemical inertness, and high breakdown electric field, 2,6 diamond and DLC thin films exhibit excellent field electron emission properties. There have therefore been a number of recent studies [10][11][12][13][14][15][16][17] directed at obtaining a better understanding of the emission mechanism. There have therefore been a number of recent studies [10][11][12][13][14][15][16][17] directed at obtaining a better understanding of the emission mechanism.…”

Section: Introductionmentioning

confidence: 99%

Studies of field emission from bias-grown diamond thin films

Ding

Gruen

Krauss

et al. 1999

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Competition of nitrogen doping and graphitization effect for field electron emission from nanocrystalline diamond films J.Synthesis and electron field emission of nanocrystalline diamond thin films grown from N 2 /CH 4 microwave plasmasWe have investigated the field emission properties of diamond films grown under substrate bias conditions in a microwave plasma chemical vapor deposition system, with a substrate temperature of 800°C, microwave power of 600 W, and a total pressure of 11 Torr. One group of films was grown with a substrate bias of Ϫ100 V in gas mixtures of 1% N 2 and 1%-20% CH 4 in H 2 , while a second group of films was grown with a substrate bias ranging from ϩ100 to Ϫ150 V in a gas mixture of 1%N 2 -10%CH 4 -89%H 2 . The field emission performance in terms of threshold field and emission current improved considerably as a function of increasing CH 4 concentration and negative bias voltage. Ultraviolet Raman analysis showed that the field emission enhancement resulting from an increase in CH 4 concentration from 1% to 5% correlates with a decrease in the sp 3 bonding character in the diamond film. The dependence of field emission on negative bias voltage appears to be correlated with ion bombardment-induced damage in the film during growth. The scanning electron microscopy image of the film grown with Ϫ150 V bias showed: smaller surface topographic features as compared to films grown under 0 and ϩ100 V bias. The film grown with a bias of Ϫ150 V showed the lowest threshold field ͑ϳ2.0 V/m͒ corresponding to an emission current density of 12.7 A/cm 2 . J vs E 0 measurements across a length of 40 mm over the film showed a uniform threshold field ͑2.0Ϯ0.55 V/m͒. The film grown with a positive bias ͑ϩ100 V͒ showed a relatively poor field emission performance.

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Enhanced Field Emission from Diamond Coated Molybdenum Emitters

Cited by 2 publications

References 7 publications

Electron energy distribution of diamond-coated field emitters

Electron energy distribution of diamond-coated field emitters

Studies of field emission from bias-grown diamond thin films

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