Enhanced field emission of well-aligned ZnO nanowire arrays illuminated by UV

Chen, Chih-Han; Chang, Shoou Jinn; Chang, Sheng-Po; Tsai, Yao-Ching; Chen, I-Cherng; Hsueh, Ting-Jen; Hsu, Cheng-Liang

doi:10.1016/j.cplett.2010.03.033

Cited by 34 publications

(11 citation statements)

References 21 publications

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“…The optimum patterned ZnO nanowire field emission device fabricated with the current approach was found to exhibit a low turn-on electric field value (1.60 μm V −1 ) due to the decrease in the field emission screening effect that results from the radial structures of the micropatterned ZnO nanowires arrays. Chen et al [169] synthesized ZnO nanowires on a ZnO:Ga/glass substrate. UV illumination increased the ZnO nanowire field emission and reduced the turn-on electric field from 5.1 to 2.1 V/μm at a current density of l μA/cm 2 .…”

Section: Symbolmentioning

confidence: 99%

Synthesis, Characterization, and Applications of ZnO Nanowires

Zhang

Ram

Stefanakos

et al. 2012

Journal of Nanomaterials

353

306

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ZnO nanowires (or nanorods) have been widely studied due to their unique material properties and remarkable performance in electronics, optics, and photonics. Recently, photocatalytic applications of ZnO nanowires are of increased interest in environmental protection applications. This paper presents a review of the current research of ZnO nanowires (or nanorods) with special focus on photocatalysis. We have reviewed the semiconducting photocatalysts and discussed a variety of synthesis methods of ZnO nanowires and their corresponding effectiveness in photocatalysis. We have also presented the characterization of ZnO nanowires from the literature and from our own measurements. Finally, a wide range of uses of ZnO nanowires in various applications is highlighted in this paper.

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Section: Symbolmentioning

confidence: 99%

Synthesis, Characterization, and Applications of ZnO Nanowires

Zhang

Ram

Stefanakos

et al. 2012

Journal of Nanomaterials

353

306

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“…Field emitters with good performance are urgently needed in a wide range of field emission (FE) based devices such as flat-panel displays, FE microscopes, microwave amplifiers, X-ray source, etc. Owing to the unique geometries of high aspect ratios and small curvature radius, one-dimensional nanostructures and one-dimensional heteronanostructures such as nanowires, nanorods, and nanotubes can exactly meet the requirements for their good FE performance. − Until now, many nanostructures and nanoheterostructures such as carbons nanoubes (CNTs), , zinc oxide (ZnO) nanowires, , silicon (Si) nanowirs, CNTs grown on ZnO nanowires, ZnO nanowires grown on CNTs, , CNTs grown on Si nanowires, − and CNTs grown on Si pyramid have been studied extensively over the past decade. However, nanostructures such as CNTs or ZnO nanowires are usually closely packed or bundled, resulting in a serious screen effect which could largely depresses their FE performance.…”

Section: Introductionmentioning

confidence: 99%

Giant Enhancement of Field Emission from Selectively Edge Grown ZnO–Carbon Nanotube Heterostructure Arrays via Diminishing the Screen Effect

et al. 2011

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Novel selectively edge grown ZnO–carbon nanotube (CNT) heterostructure field emission (FE) arrays have been fabricated by a facile and repeatable two-step process. First, with the combined effect from a ZnO seed layer and a passivation layer for nanorod growth, ZnO nanorods could only grow on the edge of a 4 μm diameter circle. Meanwhile, the local morphology such as ZnO nanorod density, uniformity, and growth direction can be modulated by the thickness of ZnO seed layer. With this adjustment, the FE performance of the ZnO nanorod ring pattern arrays is significantly improved. Then CNTs were radically grown on the surface of the ZnO nanorod ring pattern arrays. As a consequence of all these optimizations, the lowest turn-on field of 2.1 V/μm, threshold field of 3.19 V/μm, and a current density of 7 mA/cm2 at a field of 4.95 V/μm were ultimately obtained. Via calculating the electrostatic field distribution, it was found that this giant enhancement of FE performance is due to the typical morphology which can significantly diminish the screen effect.

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“…ZnO nanostructures have found many applications in fabricating electronic, optoelectronic, electrochemical devices, and electromechanical devices, such as ultraviolet (UV) lasers [4,5], light-emitting diodes [2,6,7], thin-film transistors [8,9], field emission (FE) devices [10,11], solar cells [12], and piezo-nanogenerator [13,14]. In general, ZnO nanostructures are typically manufactured by thermal evaporation [3,15], metal organic chemical vapor deposition [16], pulsed laser deposition [17], spray pyrolysis [18], epitaxial electrodeposition [19], and radiofrequency magnetron sputtering [20].…”

Section: Introductionmentioning

confidence: 99%

Temperature-dependence cathodoluminescence of ultra-sharp ZnO nanopagoda arrays

Chang

2014

Journal of Alloys and Compounds

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Enhanced field emission of well-aligned ZnO nanowire arrays illuminated by UV

Cited by 34 publications

References 21 publications

Synthesis, Characterization, and Applications of ZnO Nanowires

Synthesis, Characterization, and Applications of ZnO Nanowires

Giant Enhancement of Field Emission from Selectively Edge Grown ZnO–Carbon Nanotube Heterostructure Arrays via Diminishing the Screen Effect

Temperature-dependence cathodoluminescence of ultra-sharp ZnO nanopagoda arrays

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