Enhanced Field Emission Properties of Ga-Doped ZnO Nanosheets by using an Aqueous Solution at Room Temperature

Abstract

In this paper, gallium (Ga)-doped ZnO nanosheets were fabricated successfully on a glass substrate by using aqueous solution method. It was found that the GaZnO nanosheets grown at room temperature were structurally uniform and well oriented with pure wurtzite structure. The turn-on fields of ZnO and GaZnO nanosheets were 5.9 and 4.67 V/μm, and field enhancement factors (β) were 1966 and 4037, respectively. The results indicate that Ga-doped ZnO nanosheets exhibit enhanced field emission (FE) properties and are a promising candidate in future FE-based device applications.

Improvement of the UV-Sensing Performance of Ga-Doped ZnO Nanostructures via a Wet Chemical Solution at Room Temperature

“…The atomic radius of Ga 3+ (i.e., 0.062 nm) is similar to that of Zn 2+ (i.e., 0.074 nm); moreover, the covalent bond length of Ga-O (1.92 Å) is close to that of Zn-O (1.97 Å). [19][20][21] Thus, Ga atoms can reduce the work function and enhance the electrical conductivity of ZnO. In this work, Ga atoms are used as a dopant to increase the efficiency of the PD devices.…”