Enhanced gas sensing performance of graphene/ZnS-CdS hetero-nanowires gas sensor synthesized by Langmuir-Blodgett self-assembly method

Li, Hu; Wani, Ishtiaq Hassan; Ashok, Anumol; Han, Yuanyuan; Jafri, Syed Hassan Mujtaba; Acharya, Somobrata; Leifer, Klaus

doi:10.1088/1742-6596/922/1/012023

Cited by 2 publications

(1 citation statement)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Graphene synthesized by chemical vapor deposition (CVD) method exhibits remarkable potentialities in large-scale production of electronic nanodevices ranging from sensors [1][2][3], transistors [4][5][6] to transparent conductors [7,8] and many more. During the essential handling procedure which transfers CVD graphene grown on metal catalyst substrate such as Cu, Ni, etc, to insulating substrate like SiO 2 /Si substrate [9][10][11], a polymerassisted film acting as the supporter is necessarily employed to prevent graphene from being damaged.…”

Section: Introductionmentioning

confidence: 99%

Towards ballistic transport CVD graphene by controlled removal of polymer residues

Duan

Papadakis

et al. 2022

Nanotechnology

Self Cite

View full text Add to dashboard Cite

Polymer-assisted wet transfer of chemical vapor deposited (CVD) graphene has achieved great success towards the true potential for large-scale electronic applications, while the lack of an efficient polymer removal method has been regarded as a crucial factor for realizing high carrier mobility in graphene devices. Hereby, we report an efficient and facile method to clean polymer residues on graphene surface by merely employing solvent mixture of isopropanol (IPA) and water (H2O). Raman spectroscopy shows an intact crystal structure of graphene after treatment, and the X-ray photoelectron spectroscopy indicates a significant decrease in the C-O and C=O bond signals, which is mainly attributed to removal of polymer residues and further confirmed by subsequent atomic force microscopy analysis. More importantly, our gated measurements demonstrate that the proposed approach has resulted in a 3-fold increase of the carrier mobility in CVD graphene with the electron mobility close to 10000 cm2 V‑1 S‑1, corresponding to an electron mean free path beyond 100 nm. This intrigues the promising application for this novel method in achieving ballistic transport for CVD graphene devices.

show abstract