2021
DOI: 10.3390/coatings11050559
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Enhanced Growth Rate of Chemical Vapor Deposition Diamond Coating Motivated by Graphene Oxide

Abstract: To improve the growth rate of chemical vapor deposition (CVD) diamond coating, increasing the chemical reaction rate is essential. A novel method of dispersing graphene oxide (GO) particles as adsorbent on the substrate prior to deposition was proposed, with which the diamond coating with large grain size and high thickness was deposited on the silicon nitride under the normal CVD environment. The as-deposited diamond coating was characterized by scanning electron microscopy (SEM), surface profilometer, atomic… Show more

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Cited by 5 publications
(5 citation statements)
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“…The co-existence of GN and diamond-like phases and their mutual physiochemical interactions cannot be neglected in the growth procedures of the composite materials. For example, GO increases the chemical reaction rate of CVD diamond coating [170].…”
Section: Materials' Processing Technologiesmentioning
confidence: 99%
“…The co-existence of GN and diamond-like phases and their mutual physiochemical interactions cannot be neglected in the growth procedures of the composite materials. For example, GO increases the chemical reaction rate of CVD diamond coating [170].…”
Section: Materials' Processing Technologiesmentioning
confidence: 99%
“…In this way, the high growth rate of diamond might be a preferable option to achieve high-concentration N doping of diamond, since the decrease in growth time was indicative of the increase in concentration of the N component near the substrate. In the previous literature [26], adding GO particles on the Si3N4 surface effectively increased the growth rate of diamond film. The deposition process of GO-diamond film was the same as in the literature [42].…”
Section: Characterization Of Diamond Films With Go Particlesmentioning
confidence: 77%
“…However, allowing for the CVD diamond deposition, the N 2 /CH 4 ratio is limited to a low magnitude (less than 5%) to guarantee that the chemical reactions of diamond growth can take place in the CVD chemical chamber [5]. Hence, depositing the diamond film with a high-concentration N element seems difficult for the CVD technique [26,27]. A previous study reported that a homogeneous N-doped SiO 2 film was produced on the surface of silicon nitride fibers in dry air at 800-1300 • C [28], which suggested that high temperatures can decompose the surface of silicon nitride to form a new N component for growing N-doped films.…”
Section: Introductionmentioning
confidence: 99%
“…The GO was found to improve the growth rate of CVD diamond coating by increasing the chemical reaction rate [149]. A novel method of dispersing GO particles as adsorbent on the substrate prior to deposition was proposed, with which the diamond coating with large grain size and high thickness was deposited on the silicon nitride under the normal CVD environment.…”
Section: Materials' Processing Technologiesmentioning
confidence: 99%