b S Supporting Information O ne-dimensional (1D) semiconductor nanoarchitectures with tunable morphologies, dimensions, crystallographic phases, and orientation are of tremendous interest for a broad range of current and future applications, 1 including energy harvesting 2 and generation, 3 sensing, 4 optics, 5 and electronics. 6 The design and controlled growth of 1D nanostructures will enable the distinct physical and chemical properties of these building blocks to be utilized. Several metal supported/catalyzedgrowth mechanisms, such as vapor-solid-solid (VSS), 7 vaporliquid-solid (VLS), 8 supercritical fluid-liquid-solid (SFLS), 9 and supercritical fluid-solid-solid (SFSS), 10 have been used to describe and interpret the growth of 1D nanostructures by vapor, liquid, and supercritical fluid phase techniques. Recently, the growth of longitudinally heterostructured nanowires was demonstrated to be controllable with sharp interfaces between segments, 11 intentional twinning, 12,13 and kinking. 14 Theoretically a solid seed should enable the transfer of crystal information to a growing material similar to the defect-supported growth of nanowires "seeded" by screw dislocation translations from epitaxial substrates to the growing material. 15 There are