2007
DOI: 10.1088/0268-1242/22/4/006
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EnhancedfTand linearity performance of InGaP/GaAs HBTs using a non-uniform doping collector

Abstract: In this paper, the ac and power linearity characteristics of InGaP/GaAs heterojunction bipolar transistors (HBTs) with collector doping design have been presented. The collector design is to employ a thin high-doping layer inside the low-doping collector. The thickness, doping and location of the inserted layer are systematically studied with consideration of breakdown characteristics and the Kirk effect. The Kirk effect is relieved by redistributed electric fields in the non-uniform doping collector to extend… Show more

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