Enhanced in-plane uniformity and breakdown strength of diamond Schottky barrier diodes fabricated on heteroepitaxial substrates

Abstract

In this study, pseudo-vertical diamond Schottky barrier diodes (SBDs) were fabricated on heteroepitaxial substrates and a metal impurity-incorporated buffer layer to suppress killer defects was inserted. All SBDs exhibited excellent rectifying actions with suppressed leakage current. The in-plane uniformity was improved after the insertion of the buffer layer. Forward characteristics were fitted by thermionic emission theory and Tung’s model in the temperature range from 300 to 480 K. The perfection of the Schottky-diamond interface is discussed. Moreover, the SBDs exhibited a high breakdown voltage with a sudden increase in current at 375 V, which is the highest value reported for heteroepitaxial diamond. These results indicate that heteroepitaxial substrates are a promising alternative for large-area low-cost diamond electronics.

Impact of Laser‐Induced Graphitization on Diamond Schottky Barrier Diodes

“…For the fabrication process of pVSBDs, a heavily boron‐doped (p + ) contact layer was homoepitaxially grown on the substrate using hot‐filament chemical vapor deposition (HFCVD). [ 23–25 ] The B concentration was 10 20 cm −3 . Next, a lightly boron‐doped (p − ) layer with a thickness of 2 μm was grown on the contact layer using microwave plasma‐enhanced CVD (PECVD).…”

“…For the fabrication process of pVSBDs, a heavily boron-doped (p þ ) contact layer was homoepitaxially grown on the substrate using hot-filament chemical vapor deposition (HFCVD). [23][24][25] The B concentration was 10 20 cm À3 . Next, a lightly boron-doped (p À ) layer with a thickness of 2 μm was DOI: 10.1002/pssa.202100846 Pseudovertical Schottky barrier diodes (SBDs) are fabricated on a single-crystal diamond substrate.…”

Chemical Vapor Deposition Single‐Crystal Diamond: A Review

“…This group measured the highest breakdown voltage ever reported for heteroepitaxial diamond (375 V). [181] Concerning color center applications, single native NV centers were detected for the first time in heteroepitaxial diamond from Audiatec (Augsburg Diamond Technology GmbH) with a density of 1 NV per μm 3 . [182] These NV centers are embedded in an ensemble of SiV centers.…”

“…This group measured the highest breakdown voltage ever reported for heteroepitaxial diamond (375 V). [ 181 ]…”

Характеризация Электрофизическими Методами Монокристаллического Алмаза, Легированного Бором (Обзор)

“…Уникальные электрофизические и механические свойства алмаза позволяют рассматривать его как весьма перспективный материал для использования в силовой и оптоэлектронике, а также для работы в экстремальных условиях [1][2][3][4][5][6]. Для высоковольтной электроники полупроводниковые устройства на основе алмаза могут существенно снизить энергопотребление, повысить предельные значения пробивного напряжения, рабочую частоту и температуру [7][8][9][10][11]. Низкие значения коэффициентов адгезии и трения у алмаза по сравнению с кремнием показывают преимущества применения алмазных пленок в микроэлектромеханических (МЭМС) устройствах [12][13][14][15].…”