2021
DOI: 10.1021/acssuschemeng.1c03381
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Enhanced In Situ Separation of Boron at the Silicon Alloy Solidification Interface through Innovating the Impurity Chemical Reconstruction Approach for SoG-Si

Abstract: Removal of trace impurities such as boron (B) and phosphorus (P) has always been a challenge for the preparation of solar-grade silicon (SoG-Si). Chemical reconstruction has been thought to be an effective way to remove trace impurities by changing the phase structure and location of impurities. The traditional way of the chemical reconstruction of impurities at the grain boundary after solidification inevitably relies on the subsequent separation of crystalline Si and chemical reconstruction medium. Thus, we … Show more

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Cited by 7 publications
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