Enhanced In Situ Separation of Boron at the Silicon Alloy Solidification Interface through Innovating the Impurity Chemical Reconstruction Approach for SoG-Si
Abstract:Removal of trace impurities such
as boron (B) and phosphorus (P)
has always been a challenge for the preparation of solar-grade silicon
(SoG-Si). Chemical reconstruction has been thought to be an effective
way to remove trace impurities by changing the phase structure and
location of impurities. The traditional way of the chemical reconstruction
of impurities at the grain boundary after solidification inevitably
relies on the subsequent separation of crystalline Si and chemical
reconstruction medium. Thus, we … Show more
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