Enhanced InAs nanopillar electrical transport by <i>in-situ</i> passivation

Lin, Andrew; Shapiro, Jenessa R.; Scofield, Adam C.; Liang, Baolai; Huffaker, Diana L.

doi:10.1063/1.4791592

Cited by 16 publications

(17 citation statements)

References 27 publications

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“…A close-up TEM image (Figure 2 b) shows that the truncated octahedron is of single crystal zinc-blende (ZB) structure without any stacking fault or wurtzite (WZ) region. [ 35 ] This is likely because of the lower growth temperature (470 °C) and larger energy difference between zinc-blende (ZB) and wurtzite (WZ) InSb. [ 35 ] This is likely because of the lower growth temperature (470 °C) and larger energy difference between zinc-blende (ZB) and wurtzite (WZ) InSb.…”

Section: Resultsmentioning

confidence: 99%

Tuning the Au‐Free InSb Nanocrystal Morphologies Grown by Patterned Metal–Organic Chemical Vapor Deposition

Lin

Shapiro

Eisele

et al. 2014

Adv Funct Materials

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4311www.MaterialsViews.com wileyonlinelibrary.com quantum physical phenomena and spinorbit systems. [18][19][20] Despite these attractive properties, advanced development in InSb-based technology has been diffi cult because of a lack of semi-insulating, lattice-matched substrates, and convoluted epitaxial constraints. Recent progress in nano-heteroepitaxy, however, has enabled high-quality III-V NPs to form on highly lattice-mismatched substrates. [ 3,21 ] This advancement opens the door for heterogeneous integration of high-performance InSb NP devices on cheaper and more readily available platforms.Exploration of InSb in the NP community is a growing research interest, with the fi rst reports appearing in 2005. InSb NPs have been grown using Au-assisted chemical beam epitaxy, [ 22,23 ] Au-catalyzed metal-organic chemical vapor deposition (MOCVD), [24][25][26] thermal CVD, [ 27 ] electrodeposition in porous templates, [ 28 ] and self-nucleation. [ 29 ] Almost all recently published methods are based on epitaxial techniques that generally use Au catalysts and an initial formation of InAs NP segments to assist the InSb NP formation. However, there has been evidence of Au atom contamination in the NPs using Au-catalyzed growth [ 30 ] ; Au is known to create recombination centers in III-V semiconductors. This can signifi cantly reduce the minority carrier lifetime and increase scattering, therefore hampering the device performance. Moreover, the necessity of using short InAs segments to assist InSb NP formation can further complicate practical device fabrication because of the large band-offset and type-III, broken-gap band alignment between InAs and InSb. [ 31 ] In this work, we provide a thorough study of direct InSb nanostructure formation on patterned InAs (111)B substrates, by MOCVD, without the use of Au catalysts and short InAs segments. We investigate various growth conditions that result in different types of InSb nanostructures, including the conditions required to achieve vertical NP growth. Our observations are then explained by fi rst-principles calculations using density-function theory (DFT). This paper provides a basic ground work for potential optoelectronic and electronic devices based on Au-free InSb NPs. MethodsInSb nanostructures are grown on patterned InAs (111)B substrates with a low-pressure (60 torr) vertical Emcore MOCVD reactor, using trimethylindium (TMIn) and trimethylantimony (TMSb) as precursors. The InAs substrates are patterned with A thorough study of direct InSb nanocrystal formations on patterned InAs (111)B substrates is provided. These nanostructures are created without the use of Au catalysts or initial InAs segments. Under the growth conditions generally used for selective-area, catalyst-free epitaxy, a wide range of InSb nanocrystal morphologies are observed. This is because the low-energy InSb surfaces, studied by fi rst-principles calculations, are the {111} facets as opposed to the {110} facets. By controlling the V/III ratio during growth, different InSb nanostructures can...

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Section: Resultsmentioning

confidence: 99%

Tuning the Au‐Free InSb Nanocrystal Morphologies Grown by Patterned Metal–Organic Chemical Vapor Deposition

Lin

Shapiro

Eisele

et al. 2014

Adv Funct Materials

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“…This intermediate GaAs layer is expected to reduce the stress at the surface of the InAs and improve the intrinsic properties of the NW (like e.g. carrier mobility), as already observed in various NWs with cover shells [30][31][32][33][34]. A sketch of the cross section of the wires is shown Fig.…”

Section: Fabricationmentioning

confidence: 86%

InAs Nanowire with Epitaxial Aluminum as a Single-Electron Transistor with Fixed Tunnel Barriers

et al. 2016

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We report on fabrication of single-electron transistors using InAs nanowires with epitaxial aluminium with fixed tunnel barriers made of aluminium oxide. The devices exhibit a hard superconducting gap induced by the proximized aluminium cover shell and they behave as metallic single-electron transistors. In contrast to the typical few channel contacts in semiconducting devices, our approach forms opaque multichannel contacts to a semiconducting wire and thus provides a complementary way to study them. In addition, we confirm that unwanted extra quantum dots can appear at the surface of the nanowire. Their presence is prevented in our devices, and also by inserting a protective layer of GaAs between the InAs and Al, the latter being suitable for standard measurement methods.

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“…Additionally, it is noted that the emission peak of InAs inserts grown for 30 seconds is at 0.483 eV, much different from the zinc-blende InAs bandgap of 0.415 eV at 77 K. It is mainly due to a high-density of rotational twins, i.e. crystal phase switches between zinc-blende and wurzite, which is commonly observed in InAs nanowires grown by selective-area growth mode [20,21].…”

Section: Inas Insertsmentioning

confidence: 99%

Axial InAs(Sb) inserts in selective-area InAsP nanowires on InP for optoelectronics beyond 25 µm

Ren¹,

Farrell²,

Huffaker³

2018

Opt. Mater. Express

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Abstract:In this work, we report on the growth of high yield small bandgap InAs and InAsSb inserts embedded in InAsP nanowires grown on an InP substrate by catalyst-free selective-area metal-organic chemical vapor deposition. It is observed that the growth of the inserts with high aspect ratios can be achieved by properly tuning the V/III ratio. Nanowire arrays with InAs(Sb) inserts exhibit strong photoluminescence at 77 K from interband transitions, spanning a wavelength range of 2.30-3.70 µm. In addition, the InAsP/InAs heterointerfaces are characterized by a scanning transmission electron microscope and an energy-dispersive X-ray spectroscopy. We believe that these results pave the way to engineering interband transitions and enabling hybrid integration for nanoscale optical devices at the mid-wavelength infrared.

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Enhanced InAs nanopillar electrical transport by in-situ passivation

Abstract: Articles you may be interested inOxide-free InAs(111)A interface in metal-oxide-semiconductor structure with very low density of states prepared by anodic oxidation

Cited by 16 publications

References 27 publications

Tuning the Au‐Free InSb Nanocrystal Morphologies Grown by Patterned Metal–Organic Chemical Vapor Deposition

Tuning the Au‐Free InSb Nanocrystal Morphologies Grown by Patterned Metal–Organic Chemical Vapor Deposition

InAs Nanowire with Epitaxial Aluminum as a Single-Electron Transistor with Fixed Tunnel Barriers

Axial InAs(Sb) inserts in selective-area InAsP nanowires on InP for optoelectronics beyond 25 µm

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