2012
DOI: 10.1103/physrevb.85.235453
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Enhanced intervalley scattering of twisted bilayer graphene by periodicABstacked atoms

Abstract: The electronic properties of twisted bilayer graphene on SiC substrate were studied via combination of transport measurements and scanning tunneling microscopy. We report the observation of enhanced intervalley scattering from one Dirac cone to the other, which contributes to weak localization, of the twisted bilayer graphene by increasing the interlayer coupling strength. Our experiment and analysis demonstrate that the enhanced intervalley scattering is closely related to the periodic AB stacked atoms (the A… Show more

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Cited by 31 publications
(33 citation statements)
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“…To further understand our experimental result, we calculated the effects of both the strain and curvature on the electronic band structures of the twisted graphene bilayer by tight-binding model with the Hamiltonian 20,42,57 . In the flat region around the wrinkle, the lattices of the twisted graphene bilayer are compressed several percentages in a prescribed direction and the out-of-plane distortion of the sample is very small.…”
Section: Discussionmentioning
confidence: 99%
“…To further understand our experimental result, we calculated the effects of both the strain and curvature on the electronic band structures of the twisted graphene bilayer by tight-binding model with the Hamiltonian 20,42,57 . In the flat region around the wrinkle, the lattices of the twisted graphene bilayer are compressed several percentages in a prescribed direction and the out-of-plane distortion of the sample is very small.…”
Section: Discussionmentioning
confidence: 99%
“…9 Graphene layers with a twist can now be grown by a variety of methods, which allow one to access a range of twist angles. [10][11][12] However, the nature and extent of the interlayer coupling, and the consequences thereof, continue to be debated. 13 The question then arises: in what way are these properties altered upon the introduction of defects in TBLG?…”
Section: -6mentioning
confidence: 99%
“…The linear DOS around the Dirac point E D consists well with that of the pristine graphene. The position of the Dirac point E D is slightly above the Fermi level, suggesting charge transfer between the graphene and the substrate [39][40][41].…”
mentioning
confidence: 99%