Enhanced lateral photovoltaic effect in 3C-SiC/Si heterojunction under external electric field

Nguyen, Tuan-Hung; Vu, Trung-Hieu; Pham, Tuan Anh; Ninh, Dinh Gia; Nguyen, Cong Thanh; Nguyen, Hong-Quan; Tong, Braiden; Tran, Dang D.H.; Streed, Erik W.; Dau, Van Thanh; Nguyen, Nam-Trung; Dao, Dzung Viet

doi:10.1016/j.sna.2023.114746

Sensors and Actuators A: Physical

2023

DOI: 10.1016/j.sna.2023.114746

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Enhanced lateral photovoltaic effect in 3C-SiC/Si heterojunction under external electric field

Tuan-Hung Nguyen,

Trung-Hieu Vu,

Tuan Anh Pham

et al.

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2024

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Cited by 2 publications

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Effect of mechanical strain on lateral photovoltaic effect in n‐3C‐SiC/n‐Si hetorjunction Toward mechanical strain sensors capable of photoenergy harvesting

Tran,

Nguyen,

Nguyen

et al. 2024

Nano Energy

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Effect of mechanical strain on lateral photovoltaic effect in n‐3C‐SiC/n‐Si hetorjunction Toward mechanical strain sensors capable of photoenergy harvesting

Tran,

Nguyen,

Nguyen

et al. 2024

Nano Energy

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Thermo-phototronic Effect in Double Semiconductor Heterostructures for Highly Sensitive Self-Powered Sensors

Nguyen,

Tran

et al. 2024

ACS Appl. Electron. Mater.

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Understanding the sensing mechanism and the structure–property relationship of self-powered, ultrasensitive photodetectors and temperature sensors is essential for their development. In this study, we report the thermo-phototronic effect observed in double semiconductor heterostructures capable of light harvesting and ultrasensitive temperature sensing. To demonstrate the advances of using the double heterostructure, we conducted a comparative study with a single heterostructure of highly doped n-3C-SiC/p-Si to understand the light harvesting capability and sensing performance. Our results show that the double n-3C-SiC/p-Si heterostructure outperformed the single counterpart in both photovoltage generation and sensitivity, confirming that the structural design significantly impacts the sensing performance of the devices. Under 7.5 mW/cm2 illumination, the measured voltage in the double structure changed by 21 mV under a 0.2 K temperature gradient, corresponding to an ultrahigh sensitivity of 110 mV/K. This sensitivity is more than 300 times higher than that of 0.3 mV/K observed in the single heterostructure. The underlying physics is attributed to the structural design of the double n-3C-SiC/p-Si heterostructure that controls charge carrier diffusion from the illuminated electrode to the other, resulting in a high photovoltage. These findings demonstrate that using the double n-3C-SiC/p-Si heterostructures can significantly enhance the sensitivity compared with using the single heterostructures, thereby contributing significantly to the development of self-powered photodetectors and temperature sensors.

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Enhanced lateral photovoltaic effect in 3C-SiC/Si heterojunction under external electric field

Cited by 2 publications

References 49 publications

Effect of mechanical strain on lateral photovoltaic effect in n‐3C‐SiC/n‐Si hetorjunction Toward mechanical strain sensors capable of photoenergy harvesting

Effect of mechanical strain on lateral photovoltaic effect in n‐3C‐SiC/n‐Si hetorjunction Toward mechanical strain sensors capable of photoenergy harvesting

Thermo-phototronic Effect in Double Semiconductor Heterostructures for Highly Sensitive Self-Powered Sensors

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