Enhanced light emission from InGaN/GaN quantum wells by using surface plasmonic resonances of silver nanoparticle array

Abstract

Enhanced light emission from InGaN/GaN quantum wells by using surface plasmonic resonances of silver nanoparticle array * Chen Zhan-Xu(陈湛旭) a)b) , Wan Wei(万 巍) a) , Zhang Bai-Jun(张佰君) b) , He Ying-Ji(何影记) a) , and Jin Chong-Jun(金崇君) b) †

Performance improvement of AlGaN-based deep ultraviolet light-emitting diodes with double electron blocking layers

“…Over the past decades, plenty of studies have focused on the performance optimizations of laser diodes (LDs) and visible high-brightness light-emitting diodes (LEDs) theoretically and experimentally, [1][2][3] especially the organic LEDs, [4,5] and GaN-based blue LEDs, [6,7] and very recently some new achievements have also be reported in this field. [8][9][10][11] In order to enhance the internal quantum efficiency (IQE) as well as reduce efficiency droop, many researches focus on improving light output power and increasing radioactive recombination by increasing hole injection, strengthening carrier confinement in the quantum wells (QWs), alleviating electron leakage and weakening polarization electrostatic field in the active region.…”

Two-color light-emitting diodes with polarization-sensitive high extraction efficiency based on graphene

“…To avoid the above structural problem of LEDs and to extract more light from them, researchers have suggested several approaches, such as changing the LED chip shape, [5] nanohybrid structures, [6][7][8] micro-rods, [9] developed electron blocking layer structure, [10] photon recycling, [11] coupling to surface plasmonic modes, [12] roughening the surface [13,14] and metallic photonic crystal embedding in LED. [15] These approaches, however, do not alter directly the spontaneous emission properties of the devices.…”