Enhanced light extraction efficiency of GaN-based light-emittng diodes by nitrogen implanted current blocking layer

Kim, Yong Deok; Oh, Seung Kyu; Park, Min Joo; Kwak, Joon Seop

doi:10.1016/j.materresbull.2016.03.012

Cited by 4 publications

(2 citation statements)

References 13 publications

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“…6,7 Fluorine ions have been employed to induce a high density of free holes in the near-surface layer of GaN, 8 proving beneficial for micro-LED applications by isolating the emitting area and improving electronic properties. 9,10 N ion implantations have found applications in transferring GaAs into a GaN nanolayer, 11 epitaxial lateral overgrowth processes, 12 current block layer formation, 13 and GaN sidewall treatment. 14 Ion sources such as Co, Fe, Ni, and O have been utilized to investigate their implantation defect profiles in GaN.…”

Section: Introductionmentioning

confidence: 99%

“…Different types of ions have been employed to enhance specific applications. Argon ion implantation has been utilized to create a nano-air void structure on both GaN layers and sapphire substrates. , Fluorine ions have been employed to induce a high density of free holes in the near-surface layer of GaN, proving beneficial for micro-LED applications by isolating the emitting area and improving electronic properties. , N ion implantations have found applications in transferring GaAs into a GaN nanolayer, epitaxial lateral overgrowth processes, current block layer formation, and GaN sidewall treatment . Ion sources such as Co, Fe, Ni, and O have been utilized to investigate their implantation defect profiles in GaN. , Ion implantation processes have also been employed in resonant-cavity LEDs (RC-LEDs) and vertical-cavity surface-emitting lasers (VCSELs).…”

Section: Introductionmentioning

confidence: 99%

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Nanoporous Nitrogen-Ion-Implanted InGaN Resonant-Cavity Light-Emitting Diodes for Vertical-Cavity Surface-Emitting Lasers

Shiu,

Wang,

et al. 2024

ACS Appl. Nano Mater.

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InGaN resonant-cavity light-emitting diodes (RC-LEDs) with a dielectric distributed Bragg reflector (DBR), a porous-GaN DBR, and a nitrogen ion (N + )-implanted aperture (6 μm diameter) were demonstrated. In the ion implantation process, the N + ions were penetrated directly through an indium-tin-oxide conductive layer and SiO 2 layer to form the insulated p-GaN:Mg layer, which provides a fascinating current confinement structure. The broadened electroluminescence (EL) peaks were measured at 401.5 and 435.8 nm in the implanted LED without double DBR structures. Multiple EL emission peaks with narrow line widths were observed in the RC-LED structure, indicating a strong resonant effect with different cavity modes. Two groups of effective resonant-cavity lengths, 1.48 and 1.50 μm, were analyzed through the angle-resolved EL spectra due to the anisotropic porous-GaN layers in the porous DBR structure. The divergent angles in far-field EL radiation patterns were reduced from 118°for the nontreated LED to 28°for the RC-LED structures. A high resonant-cavity effect, line-width narrowing phenomenon, and small divergent angle were observed in the InGaN RC-LED with 6 μm-diameter ion-implanted aperture and top dielectric/bottom porous DBR structures.

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