Enhanced Light Output of AlGaInP Light Emitting Diodes Using an Indium–Zinc Oxide Transparent Conduction Layer and Electroplated Metal Substrate

Kuo, Der Ming; Wang, Shui Jinn; Uang, Kai−Ming; Chen, Tron Min; Lee, Wei Chi; Wang, Pei Ren

doi:10.1143/apex.4.012101

Cited by 7 publications

(5 citation statements)

References 14 publications

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“…By reducing the defect density in the perovskite layer, controlling strain and crystal phase, and improving crystalline order, electronic properties can be enhanced and quantum devices can be developed. Indeed, the ability to exploit epitaxy and epitaxial strain in silicon (Si) and III-V semiconductors revolutionized modern computing and optoelectronics and led to improved photovoltaics ( Bertness et al., 1994 ; Dai et al., 2015 ; King et al., 2007 ; Lee et al., 2012a ; Takamoto et al., 1997 ), LEDs ( Ghosh et al., 1986 ; Huang et al., 1992 ; Kuo et al., 2010 ; Peng and Wu, 2004 ), as well as 2DESs with ultra-high carrier mobility ( Dingle et al., 1978 ; Hatke et al., 2017 ; Manfra, 2014 ; Pfeiffer et al., 1989 ; Umansky et al., 2009 ). For example, strained Si is now commonly found in every MOSFET ( Sun et al., 2007 ) due to the increased interatomic distance in the silicon layer that nearly doubles the mobility.…”

Section: Introductionmentioning

confidence: 99%

Extraordinary phase coherence length in epitaxial halide perovskites

Nasyedkin

King²,

Zhang

et al. 2021

iScience

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Summary Inorganic halide perovskites have emerged as a promising platform in a wide range of applications from solar energy harvesting to computing and light emission. The recent advent of epitaxial thin film growth of halide perovskites has made it possible to investigate low-dimensional quantum electronic devices based on this class of materials. This study leverages advances in vapor-phase epitaxy of halide perovskites to perform low-temperature magnetotransport measurements on single-domain cesium tin iodide (CsSnI 3 ) epitaxial thin films. The low-field magnetoresistance carries signatures of coherent quantum interference effects and spin-orbit coupling. These weak anti-localization measurements reveal a micron-scale low-temperature phase coherence length for charge carriers in this system. The results indicate that epitaxial halide perovskite heterostructures are a promising platform for investigating long coherent quantum electronic effects and potential applications in spintronics and spin-orbitronics.

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Section: Introductionmentioning

confidence: 99%

Extraordinary phase coherence length in epitaxial halide perovskites

Nasyedkin

King²,

Zhang

et al. 2021

iScience

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“…There are reports that the extraction efficiency for light upwardly emitted from the active region can be effectively improved by considering the top window layer, 2,3) transparent conductive layer, [4][5][6] surface texturing, 7,8) and nanosized materials 9,10) deposited on its surface. Additionally, a remarkable increment in the efficiency of AlGaInP LED was found in the GaP window with a carbon contact layer 11) and a zinc contact layer 12) fabricated by in situ growth and post-zinc diffusion, respectively.…”

Section: Introductionmentioning

confidence: 99%

Efficiency Improvement of 630 nm AlGaInP Light-Emitting Diodes based on AlGaAs Bottom Window

Lee¹,

Kim²,

Kim³

et al. 2013

Jpn. J. Appl. Phys.

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Metal organic chemical vapor deposition (MOCVD) based aluminum gallium arsenide (AlGaAs) used as the bottom window (BW), which was inserted between the light-emitting diode (LED) structure and the absorbing substrate, has been proposed to improve the extraction efficiency of 630 nm AlGaInP LEDs. In an AlGaInP LED with this AlGaAs BW, enhanced light extraction efficiency was observed, as some of the light emitted from the active region to the absorbing substrate could pass out of the LED through the BW. In addition, it was found that a output power of 8 mW was obtained from an AlGaInP LED with both a BW and a distribution Bragg reflector (DBR), a nearly two fold improvement of over 4.2 mW that was obtained from a conventional one at an injection current of 80 mA.

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“…By reducing the defect density in the perovskite layer, controlling strain and crystal phase, and improving crystalline order, electronic properties can be dramatically enhanced and quantum devices can be developed. Indeed, the ability to exploit epitaxy and epitaxial strain in silicon (Si) and III-V semiconductors revolutionized modern computing and optoelectronics and led to improved photovoltaics [11][12][13][14][15], LEDs [16][17][18][19] as well as 2DESs with ultra-high carrier mobility [20][21][22][23][24]. For example, strained Si is now commonly found in every MOS-FET [25] due to the increased interatomic distance in the silicon layer that nearly doubles the mobility.…”

mentioning

confidence: 99%

Extraordinary Phase Coherence Length in Epitaxial Halide Perovskites

Nasyedkin,

King,

Zhang

et al. 2020

Preprint

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Inorganic halide perovskites have emerged as a promising platform for a wide range of applications from solar energy harvesting to computing, and light emission. With the recent advent of epitaxial thin film growth of halide perovskites it is now possible, for the first time, to investigate low-dimensional quantum electronic devices based on this class of materials. In this study we leverage advances in vapor-phase epitaxy of halide perovskites to perform low-temperature quantum electrical and magnetotransport measurements on single-domain cesium tin iodide (CsSnI 3 ) epitaxial thin film devices. The low-field magnetoresistance carries signatures of coherent quantum interference effects and spin-orbit coupling. We find that the low-temperature phase coherence length for charge carriers in this material exceeds that reported in two-dimensional electron systems in silicon, gallium arsenide, and graphene. These results open the door to epitaxial halide perovskite heterostructures for investigating and exploiting coherent quantum electronic effects for applications in spintronics and spin-orbitronics.

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Enhanced Light Output of AlGaInP Light Emitting Diodes Using an Indium–Zinc Oxide Transparent Conduction Layer and Electroplated Metal Substrate

Cited by 7 publications

References 14 publications

Extraordinary phase coherence length in epitaxial halide perovskites

Extraordinary phase coherence length in epitaxial halide perovskites

Efficiency Improvement of 630 nm AlGaInP Light-Emitting Diodes based on AlGaAs Bottom Window

Extraordinary Phase Coherence Length in Epitaxial Halide Perovskites

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