Enhanced Light Output Power and Growth Mechanism of GaN-Based Light-Emitting Diodes Grown on Cone-Shaped ${\hbox{SiO}}_{2}$ Patterned Template

Lin, Da-Wei; Huang, Jen Hsien; Lee, Chia-Yu; Chang, Ruey-Wen; Lan, Yu-Pin; Lin, Chien‐Chung; Lee, Kang-Yuan; Lin, Chien-Chung; Lee, Po-Tsung; Chi, Gou–Chung; Kuo, Hao‐Chung

doi:10.1109/jdt.2012.2230395

Cited by 14 publications

(5 citation statements)

References 33 publications

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“…Such a result is in good agreement with the published results reported by other research groups. 21,[33][34][35][36][37] It is clear that there is a broad range with fewer dislocations above Area D. Chiu et al and Chen et al have reported that stacking faults can block threading dislocations effectively, 38,39) which is the reason why fewer threading dislocations occur above the patterns. More detailed study of the formation of stacking faults in the PSS case has been performed.…”

Section: Resultsmentioning

confidence: 99%

Study of defects in LED epitaxial layers grown on the optimized hemispherical patterned sapphire substrates

Zhou

Wang

Lin

et al. 2014

Jpn. J. Appl. Phys.

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In this work, we focus on the study of defects in GaN grown on an optimized hemispherical patterned sapphire substrate (PSS). It is demonstrated that the proposed patterns can on the one hand induce the formation of stacking faults, and on the other hand, reduce the strain caused by thermal misfit and lattice misfit. Consequently, the optimized hemispherical patterns work successfully for both the reduction in the number of dislocations spreading to multiple quantum wells and the improvement in surface morphology. The dominant mechanism of defect multiplication and the effects of optimized hemispherical patterns in terms of materials science and device technology are elucidated.

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Section: Resultsmentioning

confidence: 99%

Study of defects in LED epitaxial layers grown on the optimized hemispherical patterned sapphire substrates

Zhou

Wang

Lin

et al. 2014

Jpn. J. Appl. Phys.

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“…The cone-shaped PSS is widely used for the elaboration of GaN-based blue and green LED applications, while ultra-violet LED applications mostly use pit-shaped PSS [ 15 , 16 ]. By replacing the material in the cones with silicon oxide ( n = 1.45), the LEE can be further enhanced as it becomes harder for the light to penetrate through the substrate [ 17 ]. The LEE promotion is achieved with the total reflection enhancement.…”

Section: Introductionmentioning

confidence: 99%

The Effect of Nitridation on Sputtering AlN on Composited Patterned Sapphire Substrate

Zhang

Zhu²,

Wang³

et al. 2023

Materials

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Here, we report on the epitaxial growth of GaN on patterned SiO2-covered cone-shaped patterned sapphire surfaces (PSS). Physical vapor deposition (PVD) AlN films were used as buffers deposited on the SiO2-PSS substrates. The gallium nitride (GaN) growth on these substrates at different alternating radio frequency (RF) power and nitridation times was monitored with sequences of scanning electron microscopy (SEM) and atomic force microscopy (AFM) imaging results. The SEM and AFM show the detail of the crystalline process from different angles. Our findings show that the growth mode varies according to the deposition condition of the AlN films. We demonstrate a particular case where a low critical alternating current (AC) power is just able to break SiO2 covalent bonds, enabling the growth of GaN on the sides of the patterns. Furthermore, we show that by using the appropriate nitridation condition, the photoluminescence (PL) integral and peak intensities of the blue light epi-layer were enhanced by more than 5% and 15%, respectively. It means the external quantum efficiency (EQE) of epitaxial structures is promoted. The screw dislocation density was reduced by 65% according to the X-ray diffraction (XRD) spectra.

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“…14,15) Various PSS parameters with different pitch, shape and height are utilized to grow LED structures in order to obtain the best device performance. [16][17][18] The compressive strain and TD density could be effectively reduced with suitable pattern-designed PSSs. 17) Spatially resolved micro-Raman spectroscopy has recently been used to observe the in-plane strain distribution by measuring the E 2 (high) Raman peak variation in the GaN epilayer grown on the top of the plane or cone areas of the PSS.…”

Section: Introductionmentioning

confidence: 99%

Effects of three-dimensional strain distribution on the performance of GaN-based light-emitting diodes on patterned sapphire substrates

Chen

2019

Jpn. J. Appl. Phys.

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Depth-resolved confocal Raman and micro photoluminescence (PL) are adopted to analyze GaN-based light-emitting diodes (LEDs) with an ex situ sputtered AlN nucleation layer on patterned sapphire substrates (PSSs). The strain on PSSs is measured by Raman spectral mapping, and the results demonstrate that the strain distribution within the LED structures strongly correlates to the pattern array of the PSS. Cone regions with less dislocations have lower strain than plane regions. The array pattern of the PSS's surface can directly affect strain existing in the later crystal growth even at the position of the layer before the p-GaN growth. Moreover, the two-dimensional micro-PL mapping of the GaN-based LED samples on a PSS reveals a close relationship with the strain distribution on the sample surface. It is found that the strain as well as the PL intensity difference can be mitigated by proper pre-strained layers in order to realize high efficiency LEDs.

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Enhanced Light Output Power and Growth Mechanism of GaN-Based Light-Emitting Diodes Grown on Cone-Shaped ${\hbox{SiO}}_{2}$ Patterned Template

Cited by 14 publications

References 33 publications

Study of defects in LED epitaxial layers grown on the optimized hemispherical patterned sapphire substrates

Study of defects in LED epitaxial layers grown on the optimized hemispherical patterned sapphire substrates

The Effect of Nitridation on Sputtering AlN on Composited Patterned Sapphire Substrate

Effects of three-dimensional strain distribution on the performance of GaN-based light-emitting diodes on patterned sapphire substrates

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