Enhanced Long‐Term Memory Properties of ZnO Nanoparticle‐Based Optical Synaptic Devices for Neuromorphic Computing

Abstract

The enhancement of long‐term memory properties in optical synaptic devices based on ZnO nanoparticles (NPs) is investigated. High‐temperature annealing improves crystal quality and carrier mobility, leading to efficient carrier generation and transport. The annealed ZnO NPs exhibit increased band edge luminescence and reduced deep‐level emission. Their larger surface grain size decreases oxygen adsorption, resulting in enhanced desorption by photoexcited carriers during UV exposure. The annealed devices show higher excitatory postsynaptic currents (EPSCs) and slower decay rates after UV termination, indicating better long‐term memory. They also demonstrate accelerated learning processes with fewer pulse cycles required to reach 100% EPSC. Overall, this research highlights the significance of high‐temperature annealing for improving long‐term memory in ZnO NP‐based optical synaptic devices, offering insights for advanced memory devices.

Improvements in Resistive and Capacitive Switching Behaviors in Ga2O3 Memristors via High-Temperature Annealing Process

“…Therefore, strategies such as growth pressure control or the adoption of laminated structure growth have been reported to improve the quality of thin films grown by RF sputtering [ 22 , 23 ]. In addition, the most effective way to improve the film quality is known to be thermal treatment [ 24 ]. The effects of recrystallization and defect control resulting from thermal treatment are expected to control the characteristics of high-performance memristors and memcapacitors, offering a straightforward and rapid method of improving thin film quality [ 24 , 25 ].…”

“…In addition, the most effective way to improve the film quality is known to be thermal treatment [ 24 ]. The effects of recrystallization and defect control resulting from thermal treatment are expected to control the characteristics of high-performance memristors and memcapacitors, offering a straightforward and rapid method of improving thin film quality [ 24 , 25 ].…”

Effect of annealing temperature on the optoelectrical synapse behaviors of A-ZnO microtube

“…In addition, the annealing temperature of the defects strongly influenced the optoelectronic synaptic behaviors of ZnO. Al/ZnO/Al structure was designed to enhanced LTM properties [ 13 ]. The light-controlled synaptic device exhibited higher EPSC values, slower decay rates, and PPF behavior etc.…”