Enhanced low voltage nonlinearity in resonant tunneling metal–insulator–insulator–metal nanostructures

Weerakkody, Ayendra; Sedghi, Naser; Mitrović, Ivona Z.; Zalinge, Harm van; Noureddine, I Nemr; Hall, S.; Wrench, Jacqueline S.; Chalker, Paul R.; Phillips, Laurie J.; Treharne, Robert E.; Durose, K.

doi:10.1016/j.mee.2015.04.110

Cited by 38 publications

(26 citation statements)

References 10 publications

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“…The responsivity is determined by the output d.c. voltage divided by the input a.c. power (the a.c. voltage drop across S and D is measured simultaneously). The optimum intrinsic responsivity was measured to be 23,000 mV mW −1 , which is to the best of our knowledge, one of the highest in diode detectors to date 9 25 26 27 28 29 . In comparison, the previous BR based on low-mobility graphene on SiO 2 had a responsivity of just 67 mV mW −1 , >300 times lower 10 .…”

Section: Resultsmentioning

confidence: 85%

Graphene ballistic nano-rectifier with very high responsivity

et al. 2016

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Although graphene has the longest mean free path of carriers of any known electronic material, very few novel devices have been reported to harness this extraordinary property. Here we demonstrate a ballistic nano-rectifier fabricated by creating an asymmetric cross-junction in single-layer graphene sandwiched between boron nitride flakes. A mobility ∼200,000 cm2 V−1 s−1 is achieved at room temperature, well beyond that required for ballistic transport. This enables a voltage responsivity as high as 23,000 mV mW−1 with a low-frequency input signal. Taking advantage of the output channels being orthogonal to the input terminals, the noise is found to be not strongly influenced by the input. Hence, the corresponding noise-equivalent power is as low as 0.64 pW Hz−1/2. Such performance is even comparable to superconducting bolometers, which however need to operate at cryogenic temperatures. Furthermore, output oscillations are observed at low temperatures, the period of which agrees with the lateral size quantization.

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Section: Resultsmentioning

confidence: 85%

Graphene ballistic nano-rectifier with very high responsivity

et al. 2016

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“…Figure 3a,b present electron affinities [9,17,[32][33][34][35][36][37][38][39][40][41][42][43][44] and band gap [33,35,36,38,43,[45][46][47][48][49][50][51][52][53][54][55] of typical oxides that have been used in the design and fabrication of MIM diodes. Full details are listed in Table 1 for completeness.…”

Section: Introductionmentioning

confidence: 99%

Oxides for Rectenna Technology

et al. 2021

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The quest to harvest untapped renewable infrared energy sources has led to significant research effort in design, fabrication and optimization of a self-biased rectenna that can operate without external bias voltage. At the heart of its design is the engineering of a high-frequency rectifier that can convert terahertz and infrared alternating current (AC) signals to usable direct current (DC). The Metal Insulator Metal (MIM) diode has been considered as one of the ideal candidates for the rectenna system. Its unparalleled ability to have a high response time is due to the fast, femtosecond tunneling process that governs current transport. This paper presents an overview of single, double and triple insulator MIM diodes that have been fabricated so far, in particular focusing on reviewing key figures of merit, such as zero-bias responsivity (β0), zero-bias dynamic resistance (R0) and asymmetry. The two major oxide contenders for MInM diodes have been NiO and Al2O3, in combination with HfO2, Ta2O5, Nb2O5, ZnO and TiO2. The latter oxide has also been used in combination with Co3O4 and TiOx. The most advanced rectennas based on MI2M diodes have shown that optimal (β0 and R0) can be achieved by carefully tailoring fabrication processes to control oxide stoichiometry and thicknesses to sub-nanometer accuracy.

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“…Conventional diodes, such as p-n diodes and Schottky barrier diodes, cannot respond to the ultrafast pole changes with the optical frequency. As ultrafast diodes, tunnel diodes that have metal-insulator-metal (MIM) or metal-insulator-insulator-metal (MIIM) structures are strong candidates, and have been extensively studied 3–9 . Recently, Sharma et al .…”

Section: Introductionmentioning

confidence: 99%

High-current density and high-asymmetry MIIM diode based on oxygen-non-stoichiometry controlled homointerface structure for optical rectenna

Matsuura

Shimizu

Yugami

2019

Sci Rep

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Optical rectennas are expected to be applied as power sources for energy harvesting because they can convert a wide range of electromagnetic waves, from visible light to infrared. The critical element in these systems is a diode, which can respond to the changes in electrical polarity in the optical frequency. By considering trade-off relationship between current density and asymmetry of IV characteristic, we reveal the efficiency limitations of MIM diodes for the optical rectenna and suggest a novel tunnel diode using a double insulator with an oxygen-non-stoichiometry controlled homointerface structure (MOx/MOx−y). A double-insulator diode composed of Pt/TiO2/TiO1.4/Ti, in which a natural oxide layer of TiO1.4 is formed by annealing under atmosphere. The diode has as high-current-density of 4.6 × 106 A/m2, which is 400 times higher than the theoretical one obtained using Pt/TiO2/Ti MIM diodes. In addition, a high-asymmetry of 7.3 is realized simultaneously. These are expected to increase the optical rectenna efficiency by more than 1,000 times, compared to the state-of-the art system. Further, by optimizing the thickness of the double insulator layer, it is demonstrated that this diode can attain a current density of 108 A/m2 and asymmetry of 9.0, which are expected to increase the optical rectenna efficiency by 10,000.

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Enhanced low voltage nonlinearity in resonant tunneling metal–insulator–insulator–metal nanostructures

Cited by 38 publications

References 10 publications

Graphene ballistic nano-rectifier with very high responsivity

Graphene ballistic nano-rectifier with very high responsivity

Oxides for Rectenna Technology

High-current density and high-asymmetry MIIM diode based on oxygen-non-stoichiometry controlled homointerface structure for optical rectenna

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