Enhanced Luminescent Properties of TADF-OLEDs Based on Device Structures

Ting-ting, 刘婷婷 Liu; Shuhong, 李淑红 Li; Wenjun, 王文军 Wang; Yunlong, 刘云龙 Liu; Hui, 都 辉 Du; Qing-lin, 王庆林 Wang; Ling, 赵 玲 Zhao; Xuexi, 高学喜 Gao

doi:10.3788/fgxb20204101.0077

发光学报

2020

DOI: 10.3788/fgxb20204101.0077

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Enhanced Luminescent Properties of TADF-OLEDs Based on Device Structures

刘婷婷 Liu Ting-ting¹,

李淑红 Li Shuhong²,

王文军 Wang Wenjun³

et al.

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Vacuum-deposited Rb₃CeI₆ for deep-blue-light-emitting diodes

Du¹,

Yang²,

Pang³

et al. 2023

Opt. Lett.

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Recently, perovskite light-emitting diodes (PeLEDs) have exhibited outstanding performance in next-generation high-definition display applications. However, compared with green and red PeLEDs, the development of efficient and stable blue PeLEDs to meet the requirement for a wide color gamut has been a challenge. Herein, we vacuum thermally deposited a film of the lead-free rare earth halide Rb3CeI6, which shows deep blue emission with peaks at 427 nm and 468 nm. Due to the parity-allowed 5d–4f transition of Ce(III), the excited-state lifetime is as short as 22.3 ns (427 nm) and 25 ns (468 nm), respectively. The photoluminescence quantum yield (PLQY) is optimized to 51% by regulating the nucleation and growth of Rb3CeI6 grains. In a prototype rare earth light-emitting diode (ReLED) device, a thin insulating Al2O3 layer (5 nm) is inserted between the electron transport layer (ETL) and the emitting layer (EML, Rb3CeI6) to balance the carriers and reduce the dark current. The device shows a maximum luminance and EQE of 98 cd m−2 and 0.67%, respectively, and the electroluminescence (EL) spectrum maintains stability with changes in the operating voltage. In addition, the corresponding CIE coordinate is (0.15, 0.06), which closely matches the Rec. 2020 standard (0.131, 0.046).

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Vacuum-deposited Rb₃CeI₆ for deep-blue-light-emitting diodes

Du¹,

Yang²,

Pang³

et al. 2023

Opt. Lett.

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Enhanced Luminescent Properties of TADF-OLEDs Based on Device Structures

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Vacuum-deposited Rb₃CeI₆ for deep-blue-light-emitting diodes

Vacuum-deposited Rb₃CeI₆ for deep-blue-light-emitting diodes

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Enhanced Luminescent Properties of TADF-OLEDs Based on Device Structures

Cited by 1 publication

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Vacuum-deposited Rb3CeI6 for deep-blue-light-emitting diodes

Vacuum-deposited Rb3CeI6 for deep-blue-light-emitting diodes

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Vacuum-deposited Rb₃CeI₆ for deep-blue-light-emitting diodes

Vacuum-deposited Rb₃CeI₆ for deep-blue-light-emitting diodes