Enhanced magnetoresistance in layered magnetic structures with antiferromagnetic interlayer exchange

Binasch, G.; Grünberg, P.; Saurenbach, F.; Zinn, W.

doi:10.1103/physrevb.39.4828

Cited by 3,935 publications

(1,997 citation statements)

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“…After the discovery of giant magnetoresistance (GMR) by the groups of Fert [1] and Grünberg [2] in 1988, a new field in condensed matter, the magneto-or spinelectronics, evolved which has grown steadily in the last ten years. One of the most interesting problems of this new field is the spin-injection from a ferromagnet into a semiconductor, that would lead to the creation of efficient spin-filters [3], tunnel junctions [4], GMR devices for spin injection [5], etc.…”

Section: Introductionmentioning

confidence: 99%

Surface properties of the half-and full-Heusler alloys

Galanakis

2002

J. Phys.: Condens. Matter

232

166

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Abstract. Using a full-potential ab-initio technique I study the electronic and magnetic properties of the (001) surfaces of the half-Heusler alloys, NiMnSb, CoMnSb and PtMnSb and of the full-Heusler alloys Co 2 MnGe, Co 2 MnSi and Co 2 CrAl. The MnSb terminated surfaces of the half-Heusler compounds present properties similar to the bulk compounds and, although the half-metallicity is lost, an important spinpolarisation at the Fermi level. In contrast to this the Ni terminated surface shows an almost zero net spin-polarisation. While the bulk Co 2 MnGe and Co 2 MnSi are almost half-ferromagnetic, their surfaces lose the half-metallic character and the net spin-polarisation at the Fermi level is close to zero. Contrary to these compounds the CrAl terminated (001) surface of Co 2 CrAl shows a spin polarisation of about 84%.

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Section: Introductionmentioning

confidence: 99%

Surface properties of the half-and full-Heusler alloys

Galanakis

2002

J. Phys.: Condens. Matter

232

166

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“…Giant magnetoresistance (GMR) [1,2] and tunnel magnetoresistance (TMR) [3][4][5][6][7][8] effects are representative phenomena utilizing the spin-dependent scattering of carriers.…”

Section: Introductionmentioning

confidence: 99%

Film structures of Fe/B-doped carbon/Fe₃Si spin valve junctions

Kobayashi¹,

Nakashima²,

Takeichi³

et al. 2017

Proc. Asia-Pacific Conf. On Semiconducting Silicides and Related Materials 2016

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Fe/B-doped carbon/Fe3Si trilayered films were prepared on Si(111) substrates by physical vapor deposition with a mask method, and the film-structures and magnetic properties of the films were investigated. The Fe3Si and Fe layers were deposited by facing targets direct-current sputtering (FTDCS), and the B-doped carbon layers were deposited by coaxial arc plasma deposition (CAPD) with B-blended graphite targets. Here, since the B-doped carbon layers were deposited by CAPD in the same manner as the deposition of B-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films, the interlayers should be B-doped UNCD/a-C:H. The formation of a layered structure was confirmed by transmission electron microscopy (TEM). The diffusion of Fe and Si atoms into the interlayer occurs in the range of several nanometers. The shape of the magnetization curve has clear steps that evidently indicate the formation of antiparallel alignment of magnetizations owing to the difference in the coercive forces between the top Fe and bottom Fe3Si layers. It was experimentally demonstrated that B-doped UNCD/a-C:H is applicable to Fe-Si system spin valves as interlayer materials.

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“…Cr is known to promote a strong interlayer coupling in magnetic multilayers, such as Fe/Cr/Fe. 4 The onset region of the Cr-wedge on the sample is detected when recording an intensity image with the photon energy set first to the Cr L 3 edge (578.0 eV) and then to the pre-edge energy at 572.0 eV. Pixelwise division of both images reveals the Cr wedge in the field of view as shown in the right side of Fig.…”

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confidence: 97%