Enhanced magnetoresistance in perpendicular magnetic tunneling junctions with MgAl2O4 barrier

Khanal, Pravin; Zhou, Bowei; Andrade, Magda; Mastrangelo, Christopher; Habiboglu, Ali; Enriquez, Arthur; Fox, Daulton; Warrilow, Kennedy; Wang, Weigang

doi:10.1016/j.jmmm.2022.169914

Cited by 2 publications

(1 citation statement)

References 46 publications

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“…The best value of the sensitivity of the magnetic sensor was experimentally obtained as 3.4 V/T when the BaTiO3 concentration was 20%. In addition, experimental investigations of silicon-based Bi2FeNiO6 double perovskite-based and MgAl2O4 barrier magnetic tunnel junctions (MTJ) were performed by Ravi (2020) and Khanal et al (2022), respectively. When Bi2FeNiO6 double perovskite was used, tunnelling magnetoresistance varying from 0.2% to 1.8% was obtained at different temperatures.…”

Section: Introductionmentioning

confidence: 99%

Comparison of Electronic and Magnetic Properties of 4d Transition Metals Based NbAl2F4 and TcAl2F4 Spinels

Özdemir

2022

Gazi University Journal of Science Part A: Engineering and Innovation

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Half-metallic properties of NbAl2F4 spinel and semiconductor characteristics of TcAl2F4 spinel were investigated with the help of the WIEN2k program. NbAl2F4 spinel shows a metallic character in the up-electron states, while it has a semiconductor nature in the down-electron states. In NbAl2F4 spinel, the Eg bandgaps were calculated in GGA and GGA+mBJ 1.551 eV and 1.622 eV, respectively. The EHM half-metallic bandgaps were obtained 0.410 eV and 0.422 eV, respectively. In the up-spin states of TcAl2F4 spinel, Eg values were obtained 1.199 eV and 1.447 eV for the GGA and GGA+mBJ methods, respectively, while they were obtained 1.281 eV and 1.519 eV in the down-spin states, respectively. When GGA+mBJ is used, it is easily observed that the semiconductor characters increase. Total magnetic moments of NbAl2F4 and TcAl2F4 spinels were calculated 6.00 µB/cell and 10.0 µB/cell, respectively. When both electronic and magnetic moment values are carefully examined, NbAl2F4 and TcAl2F4 spinels can be used as alternative compounds in spintronic applications.

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Section: Introductionmentioning

confidence: 99%

Comparison of Electronic and Magnetic Properties of 4d Transition Metals Based NbAl2F4 and TcAl2F4 Spinels

Özdemir

2022

Gazi University Journal of Science Part A: Engineering and Innovation

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The impact of boron doping in the tunneling magnetoresistance of Heusler alloy Co2FeAl

Habiboglu,

Chandak,

Khanal

et al. 2023

Journal of Applied Physics

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Heusler alloy-based magnetic tunnel junctions have the potential to provide high spin polarization, small damping, and fast switching. In this study, junctions with a ferromagnetic electrode of Co2FeAl were fabricated via room-temperature sputtering on Si/SiO2 substrates. The effect of boron doping on Co2FeAl magnetic tunnel junctions was investigated for different boron concentrations. The surface roughness determined by atomic force microscope, and the analysis of x-ray diffraction measurement on the Co2FeAl thin film reveals critical information about the interface. The Co2FeAl layer was deposited on the bottom and on the top of the insulating MgO layer as two different sample structures to compare the impact of the boron doping on different layers through tunneling magnetoresistance measurements. The doping of boron in Co2FeAl had a large positive impact on the structural and magneto-transport properties of the junctions, with reduced interfacial roughness and substantial improvement in tunneling magnetoresistance. In samples annealed at low temperature, a two-level magnetoresistance was also observed. This is believed to be related to the memristive effect of the tunnel barrier. The findings of this study have practical uses for the design and fabrication of magnetic tunnel junctions with improved magneto-transport properties.

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Enhanced magnetoresistance in perpendicular magnetic tunneling junctions with MgAl2O4 barrier

Cited by 2 publications

References 46 publications

Comparison of Electronic and Magnetic Properties of 4d Transition Metals Based NbAl2F4 and TcAl2F4 Spinels

Comparison of Electronic and Magnetic Properties of 4d Transition Metals Based NbAl2F4 and TcAl2F4 Spinels

The impact of boron doping in the tunneling magnetoresistance of Heusler alloy Co2FeAl

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