2017
DOI: 10.7567/jjap.56.04cr16
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Enhanced Miller plateau characteristics of a 4H-SiC insulated-gate bipolar transistor in the presence of interface traps

Abstract: Miller plateau characteristics of a 4H-SiC insulated-gate bipolar transistor (IGBT) is investigated during a gate voltage turn-on under the presence of interface carrier traps at the MOSFET gate oxide. The plateau, which is observed in the device gate-emitter voltage, increased with respect to both height and length. The plateau height is mainly determined by the density increase of trap states, which also causes slow charging of the gate capacitance in the overlap region that results in a longer plateau lengt… Show more

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