Enhanced Mobility for Pentacene TFT Built on NH>inf<3>/inf<- Annealed Thermally Grown SiO>inf<2>/inf<

Abstract

We have enhanced the mobility of pentacene OTFTs using NH3-annealed SiO2 as gate dielectric and this annealing method is often applied in the semiconductor industry for inorganic transistors. The device has field-effect mobility higher than 0.5 cm2/Vs, with on/off current ratio larger than 106, and subthreshold slope less than 2.5 V per decade. When compared with the control sample, which uses N2-annealed SiO2, the mobility of the proposed pentacene OTFT increases by over 50%.