Enhanced nucleation of oxide precipitates during Czochralski silicon crystal growth with nitrogen doping

Aihara, K; Takeno, Hiroshi; Hayamizu, Yoshinori; Tamatsuka, M.; Masui, T.

doi:10.1063/1.1288157

Cited by 48 publications

(17 citation statements)

References 8 publications

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“…3c), it is believed that the impurity of nitrogen plays crucial role. In the previous studies, it has been well proved that the nitrogen significantly enhances oxygen precipitation, even at the elevated temperatures ranging from 1000 C to 1150 C [15][16][17]. Therefore, it is understandable that the grown-in oxygen precipitates in the NCZ wafer are much more and larger than those in the CZ wafer prior to the diode fabrication.…”

Section: Defects Generated During Phosphorous Diffusionmentioning

confidence: 96%

Extended defects in nitrogen-doped Czochralski silicon during diode process

Jiang

et al. 2004

Physica B: Condensed Matter

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Section: Defects Generated During Phosphorous Diffusionmentioning

confidence: 96%

Extended defects in nitrogen-doped Czochralski silicon during diode process

Jiang

et al. 2004

Physica B: Condensed Matter

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“…[8,9] Moreover, it is found that N doping can significantly enhance oxygen precipitation (OP) in CZ silicon, thus favorable for increasing the IG capability. [10,11] However, just because of the enhanced OP due to N doping, the feasibility of forming a width of denuded zone (DZ) within an NCZ silicon wafer was once questioned. [12] For such a study, it should be noted that the investigated NCZ silicon wafers were usually with nitrogen concentration of several 10 15 cm À3 .…”

Section: Introductionmentioning

confidence: 99%

Effect of Germanium Codoping on the Grown‐In Oxide Precipitates in Nitrogen‐Doped Czochralski Silicon

Zhao

et al. 2022

Physica Status Solidi (a)

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The effects of germanium (Ge)‐codoping at 1018, 1019, or 1020 cm−3 level on the grown‐in oxide precipitates in 1014 cm−3 level nitrogen (N)‐doped Czochralski (NCZ) silicon have been investigated. It is found that Ge‐codoping enhances the formation of relatively larger grown‐in oxide precipitates. However, such enhancement effect weakens with the increasing Ge‐codoping concentration. On this basis, the effect of 1018 cm−3 level Ge‐codoping on the near‐surface denuded zone (DZ) and bulk microdefects (BMDs) associated with oxygen precipitation in NCZ silicon subjected to an anneal at 1100 °C for 4 h (1100 °C/4 h) has been paid close attention. Moreover, the sustainability of the DZ in the 1100 °C/4 h ‐annealed NCZ silicon subjected to a “copper decoration” or a rigorous oxygen precipitation anneal featuring a prolonged nucleation anneal has been addressed. Thus, it is technologically significant to learn that for the 1100 °C/4 h ‐annealed NCZ silicon, the 1018 cm−3 level Ge‐codoping can remarkably increase the BMD density to better satisfy the requirement of internal gettering (IG) and also ensure the existence of a well‐defined DZ. Finally, the mechanism underlying the effect of Ge‐codoping on the formation of grown‐in oxide precipitates in NCZ silicon has been tentatively elucidated.

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“…[6][7][8][9][10][11][12] The oxide precipitates are smaller but of higher density than in N-free CZ silicon. Nitrogen doping fundamentally changes the agglomeration of vacancies and oxygen precipitation.…”

mentioning

confidence: 99%