2023
DOI: 10.1002/adma.202304728
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Enhanced Operational Stability by Cavity Control of Single‐Layer Organic Light‐Emitting Diodes Based on Thermally Activated Delayed Fluorescence

Abstract: Highly efficient organic light‐emitting diodes (OLEDs) based on thermally activated delayed fluorescence (TADF) emitters have been realized in recent years, but the device lifetime needs further improvement for practical display or lighting applications. In this work, we present a device design principle by tuning the optical cavity of single‐layer undoped devices, to realize efficient and long‐lived TADF OLEDs. Extending the cavity length to the second‐order interference maximum by increasing the emissive lay… Show more

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Cited by 8 publications
(2 citation statements)
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“…2b . For single-layer OLEDs, changing the layer thickness modifies the optical cavity, while the recombination profile for any thickness can be simulated with the same set of charge transport parameters 10 , 32 . The experimental thickness-dependent EQE follows the same trend as the simulated optical outcoupling efficiency and is quantitatively well described when further considering the PLQY of the DMAC-BP neat film.…”
Section: Resultsmentioning
confidence: 99%
“…2b . For single-layer OLEDs, changing the layer thickness modifies the optical cavity, while the recombination profile for any thickness can be simulated with the same set of charge transport parameters 10 , 32 . The experimental thickness-dependent EQE follows the same trend as the simulated optical outcoupling efficiency and is quantitatively well described when further considering the PLQY of the DMAC-BP neat film.…”
Section: Resultsmentioning
confidence: 99%
“…Given the balanced bipolar charge transport ability of 3,2‐PIC‐XT in neat film, non‐doped simplified OLEDs with thick 3,2‐PIC‐XT layers are proposed for the purpose of increasing exciton recombination zone and reducing exciton annihilation at the interfaces of functional layers as well as simplifying production of the device [69,70] . Such non‐doped thick‐layer devices are configured as ITO/MoO 3 (5 nm)/mCBP (10 nm)/3,2‐PIC‐XT (80 and 100 nm)/PPF (10 nm)/Liq (2 nm)/Al (Figure 5a), where the thick neat films of 3,2‐PIC‐XT function as EMLs and thin mCP and PPF layers serve as hole and electron injection layers, respectively.…”
Section: Resultsmentioning
confidence: 99%