Enhanced Opto‐Electrical Properties of Chalcogenide‐Rich Tin Selenide Thin Film after Incorporating Sulfur Yielding Tin Sulfoselenide

Abstract

Alloy engineering are efficient methods to improve the physical properties of two‐dimensional (2D) material‐based photovoltaic application. Tin chalcogenide belonging to layered structured semiconducting family has been a significant compound due to its outstanding characteristics. Tin selenide (SnSe) is known as promising layered compound to develop 2D materials for optoelectronic devices. The current study focused onto the effect of tin sulfoselenide (SnSSe) alloy engineering on the structural, morphological, optical, and electrical characteristics. X‐ray Diffraction (XRD) confirmed that SnSSe and SnSe are exist in the orthorhombic crystal structure phase without other secondary phases, with the preferred high‐intensity peak along (111) oriented plane. Raman spectra was reported to give information about the vibrational characteristics of the compounds. The presence of Sulfur ion in SnSSe was further confirmed by Energy Dispersive X‐ray Spectroscopy (EDAX) and X‐ray Photoelectron Spectroscopy (XPS) analysis. Bandgap energy (Eg) has been analysed by Tauc's plot and the derivative of transmittance spectra. According to both sets of analyses, the bandgap of the SnSSe thin film is considerably smaller than that of the SnSe thin film. Hall measurements indicated that SnSSe exhibits the higher hole mobility. The present work‘s results offer useful insight into the prospective device applications of two‐dimensional alloy materials.

Tunability in the optoelectrical performance of n-SnS(1−x)Sex thin films for photovoltaic applications

“…The interplanar distances of the prepared samples are evaluated using Bragg's equation. 25 The d -spacing value of the (111) orientation plane of TSSe lies between that of TS and TSe, which results in the peak shift. The lattice constants a , b , and c for the orthorhombic structure are calculated using the equation.…”

“…24 The observed trend indicates the validity of Végard's Law and suggests the presence of a uniform alloy structure. Additionally, in order to investigate the crystalline quality, the average crystallite size and micro strain are calculated using Debye–Scherrer's formula, 25 and strain formula, 26 where, k = 0.9 is the shape factor, λ = 0.15406 nm is the X-ray wavelength of Cu-Kα radiation, θ is the Bragg's angle, and β is the full width at half maximum (FWHM) of the diffracted peak. The FWHM for the most dominated (111) plane is considered to calculate the crystallite size.…”

Impact of post deposition treatment on optoelectrical and microstructural properties of tin sulfide thin film for photovoltaic applications

“…High-resolution (HR) spectrum scans of Sn 3d and S 2p for oxidation state [49]. However, they might be attributable to an impurity phase or the extremely oxidizable surface characteristics of the thin film.…”