2022
DOI: 10.1021/acsami.2c18780
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Enhanced Organic Thin-Film Transistor Stability by Preventing MoO3 Diffusion with Metal/MoO3/Organic Multilayered Interface Source-Drain Contact

Abstract: The source-drain electrode with a MoO 3 interfacial modification layer (IML) is considered the most promising method to solve electrical contact issues impeding organic thinfilm transistors (OTFTs) from commercialization. However, this method raises many concerns because MoO 3 might diffuse into organic materials, which causes device instability. In this work, we observed a significant device stability degradation by damaging on/ off switching performance caused by MoO 3 diffusion. To prevent the MoO 3 diffusi… Show more

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Cited by 9 publications
(8 citation statements)
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“…(3) Generally, the bias-stress instability effect poses a challenge for field-effect transistors, resulting in variations in the threshold voltage and source-drain current during consecutive measurements. 21 These fluctuations can introduce inaccuracies in the gas-sensing response values. To eliminate the bias-stress effects of OFETs, each transfer curve was repeatedly tested until there was no data difference in three successive tests.…”
Section: ■ Materials and Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…(3) Generally, the bias-stress instability effect poses a challenge for field-effect transistors, resulting in variations in the threshold voltage and source-drain current during consecutive measurements. 21 These fluctuations can introduce inaccuracies in the gas-sensing response values. To eliminate the bias-stress effects of OFETs, each transfer curve was repeatedly tested until there was no data difference in three successive tests.…”
Section: ■ Materials and Methodsmentioning
confidence: 99%
“…(2) After that, OFETs were immediately transferred to the test chamber filled with dry air (relative humidity of about 40%). (3) Generally, the bias-stress instability effect poses a challenge for field-effect transistors, resulting in variations in the threshold voltage and source-drain current during consecutive measurements . These fluctuations can introduce inaccuracies in the gas-sensing response values.…”
Section: Methodsmentioning
confidence: 99%
“…Especially, SSL separated n-oxide from the drain electrode and p-organic. This can be caused by charge injection into the semiconductor, [19][20][21][22][23] charge movement through the semiconductor, [24][25][26] changes in effective trap concentration, [27][28][29] or physical changes in the semiconductor thin film, [30,31] which determine its electrical properties. Therefore, the influence of SSL on a single type of TFT was investigated.…”
Section: Effects Of Ssl On Single-type Thin-film Transistor (Tft)mentioning
confidence: 99%
“…The interfacial interaction of MoO 3 /CH 3 NH 3 PbI 3−x Cl x was studied [38]. The stability of organic thin-film transistor was improved by preventing MoO 3 diffusion with a metal/MoO 3 /organic multilayer interface [39]. The photochromic behaviour of ZnO/MoO 3 interfaces was studied [40].…”
Section: Introductionmentioning
confidence: 99%
“…By reviewing progress in MoO 3 -based nanocomposites, it was found that most of the research on MoO 3 generally uses defect engineering, doping, interfaces and construction of heterostructures [2,3,12,14,15,[17][18][19][20][21][22][23][24][25][26][27][28][29][30][31]34,[38][39][40][41]51,53]. Several other materials, such as metal oxides, metal sulphides, metals, carbon nanomaterials, etc., have been used in the fabrication of MoO 3 -based heterojunctions.…”
Section: Introductionmentioning
confidence: 99%