Enhanced P-Type GaN Conductivity by Mg Delta Doped AlGaN/GaN Superlattice Structure

Zhao, Ying; Xu, Shengrui; Tao, Hongchang; Zhang, Yachao; Zhang, Chunfu; Feng, Li; Peng, Ruoshi; Fan, Xiaomeng; Du, Jinjuan; Zhang, Jincheng

doi:10.3390/ma14010144

Cited by 10 publications

(1 citation statement)

References 24 publications

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“…Various methods, such as Mg-delta doping [26] and short period super lattice (SL) [27], are used to improve the activation efficiency of Mg-dopants. The injection of hole into the active region in deep-ultra-violet (DUV) LED will be of low efficiency for low conductivity of p-type Al-rich AlGaN alloy as EBL [28].…”

Section: Polarization-induced Doping and Graded Compositionmentioning

confidence: 99%

Effects of polarized-induced doping and graded composition in an advanced multiple quantum well InGaN/GaN UV-LED for enhanced light technology

Das¹,

Lenka²,

Talukdar³

et al. 2022

Eng. Res. Express

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In this paper, a light-emitting diode in the ultra-violet range (UV-LED) with multiple-quantum wells (MQWs) of InGaN/GaN is designed and analyzed through Technology Computer-Aided Design (TCAD) simulations. The polarization effects in III-nitride heterojunction and the effects of graded composition in the electron blocking layer (EBL) are exploited to enhance the performance of the proposed UV-LED. It is observed that the effect of graded composition in the EBL helps to enhance the electrical and optical performance of the LED, thereby enabling the achievement of some promising results. The simulation-based results demonstrated that superior internal efficiency and an inferior leakage current are achieved by using a graded Al composition in the EBL rather than a uniform composition. The reported results also confirm the remarkable improvement of the light output power by 17% at ~100mA when using the graded composition and also show a reduction in series resistance leading to more current. Graded Al composition in the EBL results in the enhancement of electroluminescence spectra (i.e., an increase in the peak of the spectral density)

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Section: Polarization-induced Doping and Graded Compositionmentioning

confidence: 99%

Effects of polarized-induced doping and graded composition in an advanced multiple quantum well InGaN/GaN UV-LED for enhanced light technology

Das¹,

Lenka²,

Talukdar³

et al. 2022

Eng. Res. Express

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Excavating the Communication Performance in GaN‐Based Green Micro‐LEDs: Modular‐Architectured p‐Type Region

Huang

Tao

et al. 2022

Advanced Photonics Research

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To improve the performance of GaN‐based green micro‐light emitting diodes (μ‐LEDs) array, a modular‐architected p‐type region, which consists of polarization‐induced graded AlGaN and Al0.2Ga0.8N/GaN superlattices (SLs), is proposed to enhance p‐type conductivity. The designed p‐type structure shows a hole concentration of 1.7 × 1018 cm−3 which leads to an excellent conductivity of 2.48 Ω−1 cm−1. As a result, the fabricated μ‐LEDs array with 16 × 16 pixels exhibits a differential resistance of 7 Ω and a light output power of 7.9 mW, which is about 4 times in magnitude lower and 2 times in magnitude higher than those of μ‐LEDs array equipped with the p‐type layer using graded AlGaN and p‐GaN, respectively. Furthermore, in a visible light communication test, it exhibits a data rate improvement of 35%, with a value of 1.03 Gbps. A new approach is provided to enhance the p‐type conductivity of III‐nitride devices, which is definitely promising to improve their performance and expand their applications.

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High-density 2D hole gas in p-GaN/AlN/AlGaN on a silicon substrate with polarization-enhanced Mg ionization

Zhang

Zhu

et al. 2023

Fundamental Research

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Enhanced P-Type GaN Conductivity by Mg Delta Doped AlGaN/GaN Superlattice Structure

Cited by 10 publications

References 24 publications

Effects of polarized-induced doping and graded composition in an advanced multiple quantum well InGaN/GaN UV-LED for enhanced light technology

Effects of polarized-induced doping and graded composition in an advanced multiple quantum well InGaN/GaN UV-LED for enhanced light technology

Excavating the Communication Performance in GaN‐Based Green Micro‐LEDs: Modular‐Architectured p‐Type Region

High-density 2D hole gas in p-GaN/AlN/AlGaN on a silicon substrate with polarization-enhanced Mg ionization

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