Low-cost
perovskite solar cells (PSCs) with high power conversion
efficiencies (PCEs) of >25% are considered as the most promising
replacement
for commercial silicon-based solar cells to realize a sustainable
future. To break the theoretical PCE limits of single-junction PSCs,
all-perovskite tandem solar cells consisting of a narrow-band-gap
bottom subcell and a wide-band-gap top subcell have attracted particular
attention recently. Mixed Pb–Sn perovskites with narrow band
gaps have received great attention as an efficient light harvester
in the bottom subcell of all-perovskite tandem solar cells as a result
of the reduced toxicity, high light-absorbing capability, and matched
current with the wide-band-gap top subcells. However, mixed Pb–Sn
narrow-band-gap PSCs suffer from low PCEs, inferior stability, and
high open-circuit voltage (V
oc) loss,
owing to the high defect amount and inferior perovskite film quality
induced by the detrimental oxidation of Sn2+ cations and
the rapid crystallization of perovskite crystals. Herein, the recent
advances about the additive engineering for mixed Pb–Sn narrow-band-gap
PSCs are reviewed by demonstrating the origins and unique features
of Pb–Sn narrow-band-gap perovskites. Additionally, several
strategies to improve PCEs and durability of Pb–Sn narrow-band-gap
PSCs through additive engineering are proposed, including Sn2+ cation stabilization, heterojunction construction, crystallization
control, surface/grain boundary passivation, film morphology control,
carrier dynamics modulation, and gradient-distributed film formation.
Furthermore, the existing challenges and future directions are also
presented, aiming to provide important insights for designing and
developing efficient and stable single-junction narrow-band-gap PSCs
and all-perovskite tandem solar cells.