Enhanced Performance in Al-Doped ZnO Based Transparent Flexible Transparent Thin-Film Transistors Due to Oxygen Vacancy in ZnO Film with Zn–Al–O Interfaces Fabricated by Atomic Layer Deposition

Yang, Li; Yao, Rui; Wang, Huanhuan; Wu, Xiaoming; Wu, Jinzhu; Qin, Wei

doi:10.1021/acsami.7b02609

Cited by 149 publications

(89 citation statements)

References 49 publications

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“…To quantify the oxygen deficiency, EELS of Ti‐L edge (Figure e) and O‐K edge (Figure S11, Supporting Information) were collected from the NSTO areas near the NSTO/SBFO interface. The variation of EELS edge generally reflects the electronic structure changes pertinent to defects, bonding state, and crystal symmetry, which has been broadly reported in diverse oxides . Compared with O‐K edge, Ti‐L edge is six times more sensitive to oxygen deficiency for NSTO because each ionized oxygen vacancy transforms two Ti 4+ ions into Ti 3+ and the number of O sites is three times that of Ti sites .…”

Section: Resultsmentioning

confidence: 92%

“…It is well known that defects such as oxygen vacancy could play a big role in determining the conductivity of oxide thin films and heterostructures. The type and density of defects can be controlled during film growth, and their migration and redistribution could be triggered using external stimuli such as electric field and even solvent immersion . Similarly, PPC effect in the in‐plane structures was generally ascribed to the trapping of photon‐excited carriers by defects such as DX centers and oxygen vacancies .…”

Section: Resultsmentioning

confidence: 99%

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Colossal X‐Ray‐Induced Persistent Photoconductivity in Current‐Perpendicular‐to‐Plane Ferroelectric/Semiconductor Junctions

Paudel

Lopatin

et al. 2017

Adv Funct Materials

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Persistent photoconductivity (PPC) is an intriguing physical phenomenon,where electric conduction is retained after the termination of electromagnetic radiation, which makes it appealing for applications in a wide range of optoelectronic devices. So far, PPC has been observed in bulk materials and thin-film structures, where the current flows in the plane, limiting the magnitude of the effect. Here using epitaxial Nb:SrTiO 3 /Sm 0.1 Bi 0.9 FeO 3 /Pt junctions with a current-perpendicular-to-plane geometry, a colossal X-ray-induced PPC (XPPC) is achieved with a magnitude of six orders. This PPC persists for days with negligible decay. Furthermore, the pristine insulating state could be fully recovered by thermal annealing for a few minutes. Based on the electric transport and microstructure analysis, this colossal XPPC effect is attributed to the X-rayinduced formation and ionization of oxygen vacancies, which drives nonvolatile modification of atomic configurations and results in the reduction of interfacial Schottky barriers. This mechanism differs from the conventional mechanism of photon-enhanced carrier density/mobility in the current-in-plane structures. With their persistent nature, such ferroelectric/semiconductor heterojunctions open a new route toward X-ray sensing and imaging applications.

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Section: Resultsmentioning

confidence: 92%

Section: Resultsmentioning

confidence: 99%

Colossal X‐Ray‐Induced Persistent Photoconductivity in Current‐Perpendicular‐to‐Plane Ferroelectric/Semiconductor Junctions

Paudel

Lopatin

et al. 2017

Adv Funct Materials

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“…[1][2][3] For the next-generation displays employing oxide TFT back-planes, the method used for the deposition of the a-IGZO thin lms can be a critical factor governing the performance parameters such as higher resolution, large-area uniformity, and better device stability with a higher degree of form factor including ultra-thin and exible structures. 4,5 Atomic layer deposition (ALD) has recently been reported as a replacement for the conventional sputtering method for fabricating a-IGZO thin lms. 6,7 Radio-frequency magnetron sputtering has been the backbone for developing a-IGZO back-plane devices during the recent mass production of active-matrix organic light emitting diode (AMOLED) displays, but plausible plasma damages and high-temperature post-annealing processes may deteriorate the process margins from achieving higher performance and wider application elds.…”

Section: Introductionmentioning

confidence: 99%

Investigations on the bias temperature stabilities of oxide thin film transistors using In–Ga–Zn–O channels prepared by atomic layer deposition

et al. 2018

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Bias temperature stress stabilities of thin-film transistors (TFTs) using In-Ga-Zn-O (IGZO) channels prepared by the atomic layer deposition process were investigated with varying channel thicknesses (10 and 6 nm). Even when the IGZO channel thickness was reduced to 6 nm, the device exhibited good characteristics with a high saturation mobility of 15.1 cm 2 V À1 s À1 and low sub-threshold swing of 0.12 V dec À1. Excellent positive and negative bias stress stabilities were also obtained. When positive bias temperature stress (PBTS) stability was tested from 40 to 80 C for 10 4 s, the threshold voltages (V TH ) of the device using the 6 nm-thick IGZO channel shifted negatively, and the V TH shifts increased from À0.5to À6.9 V with the increasing temperature. Time-dependent PBTS instabilities could be explained by a stretched-exponential equation, representing a charge-trapping mechanism.

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“…When the Al precursor (trimethylaluminum, TMA) is introduced to the ZnO nanosheets during ALD, it preferably bonds to the surface O ions, as the bonding energy of AlO (511 kJ mol −1 ) is significantly larger than that of ZnO (159 kJ mol −1 ). [ 30 ] The consumption of surface O ions by the precursor further drives the surface Frenkel reaction to the right hand side and yields more oxygen vacancies near the surface region. Such oxygen extraction reaction has also been observed from the ALD reactions of TMA with other ZnO structures.…”

Section: Figurementioning

confidence: 99%

“…Such oxygen extraction reaction has also been observed from the ALD reactions of TMA with other ZnO structures. [ 30,31 ] Due to the ultrasmall thickness of our ZnO nanosheets, this surface effect would turn into a bulk property and fill the entire ZnO channel with concentrated O vacancies. Under an in‐plane electric field, these O vacancies were able to diffuse and cluster together, [ 32 ] forming continuous conductive filaments to carry a high electric current in between the two electrodes (Figure S7, Supporting Information).…”

Section: Figurementioning

confidence: 99%

Memristive Behavior Enabled by Amorphous–Crystalline 2D Oxide Heterostructure

et al. 2020

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broad selection of electrical properties. In particular, ZnO thin films have attracted great interest due to their facile preparation approaches, excellent compatibility for device integration, and controllable electronic and optoelectronic behavior. [9] Their memristive behavior is primarily associated with the non-equilibrium distribution of oxygen vacancies in response to an external electrical field. This switching mechanism allows robust cycling endurance, but it is always associated with low switching speed. [10] In contrast, 2D nanomaterials offer a quantum-confined medium which can have exceptional transport properties and substantially improved memristive behavior compared to conventional bulk materials. For example, single atomic layer 2D transition metal dichalcogenide memristors exhibited high-frequency switching with an extremely low power consumption, [6,11] and memristors based on ultrathin singlecrystalline SiGe layer demonstrated significantly improved reproducibility and low energy consumption. [3] Developing memory devices with low operating voltages and low energy consumption go in the direction of a connection between instrinsically neuromorphic devices and living neurons. [12] Nevertheless, due to the unavailability of 2D oxides nanomaterials and the high entropy of introducing vacancies in 2D confined geometry, stable 2D oxide-based memristors have yet to be demonstrated. [9] Recently, ionic layer epitaxy (ILE) was developed as a versatile solution-based approach for growing large-area oxide nanosheets on a liquid surface. [13] Atomically thin single-crystalline ZnO nanosheets were synthesized with sizes over 10 µm, enabling the study of the memristor properties based on 2D metal oxides. In this work, we show extraordinary memristive behavior enabled by interfacing atomically thin single crystalline ZnO nanosheets with a few-nm thick amorphous Al 2 O 3 layer. The conduction mechanism was attributed to the classic oxygen vacancy conductive channels in the lateral transistor module. In this configuration, the ZnO nanosheet provides a 2D host of oxygen vacancies, while the amorphous Al 2 O 3 facilitates the generation and stabilization of the oxygen vacancies. The 2D heterointerface brought a new promise for flexible nonvolatile and ultralow power memory devices.Atomically thin single-crystalline ZnO nanosheets were synthesized by ILE, [13,14] in which amphiphilic molecules (oleyl sulfate) self-assembled into a monolayer at the water-air The emergence of memristive behavior in amorphous-crystalline 2D oxide heterostructures, which are synthesized by atomic layer deposition (ALD) of a few-nanometer amorphous Al 2 O 3 layers onto atomically thin single-crystallineZnO nanosheets, is demonstrated. The conduction mechanism is identified based on classic oxygen vacancy conductive channels. ZnO nanosheets provide a 2D host for oxygen vacancies, while the amorphous Al 2 O 3 facilitates the generation and stabilization of the oxygen vacancies. The conduction mechanism in the high-resistance state follo...

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Enhanced Performance in Al-Doped ZnO Based Transparent Flexible Transparent Thin-Film Transistors Due to Oxygen Vacancy in ZnO Film with Zn–Al–O Interfaces Fabricated by Atomic Layer Deposition

Cited by 149 publications

References 49 publications

Colossal X‐Ray‐Induced Persistent Photoconductivity in Current‐Perpendicular‐to‐Plane Ferroelectric/Semiconductor Junctions

Colossal X‐Ray‐Induced Persistent Photoconductivity in Current‐Perpendicular‐to‐Plane Ferroelectric/Semiconductor Junctions

Investigations on the bias temperature stabilities of oxide thin film transistors using In–Ga–Zn–O channels prepared by atomic layer deposition

Memristive Behavior Enabled by Amorphous–Crystalline 2D Oxide Heterostructure

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