Enhanced Performance of Blue Light-Emitting Diodes With InGaN/GaN Superlattice as Hole Gathering Layer

Abstract

An InGaN/GaN superlattice (SL) with Mg-doped barriers was designed and inserted into the InGaN-based blue light-emitting diodes (LEDs) as a hole gathering layer (HGL) to promote hole injection into the active region. The fabricated LEDs with the SL HGL show 36.4% increase in light output power at an injection current of 200 mA. Meanwhile, the efficiency droop is also mitigated effectively, as compared to the traditional LEDs. The improved performance is attributed to increased hole injection efficiency and decreased electron leakage into the p-type region.

Performance enhancement of AlGaN/InGaN MQW LED with GaN/InGaN superlattice structure

“…In recent years, SL layers of aluminium gallium nitride (AlGaN)/GaN and indium GaN (InGaN)/GaN, both have exhibited good performance on the basis of higher mobility, better current‐spreading as well as enhanced quantum efficiency [15, 16]. The electron and hole blocking layers can also be added into the SL structure that can further contribute toward enhancing the output performance of the device [17]. Similar works have been reported on heterostructure LEDs using AlGaN/InGaN layers in SL configurations that have shown promising results [18, 19].…”

Advantages of AlGaN-based deep ultraviolet light-emitting diodes with a superlattice electron blocking layer

“…However, improvement via conventional EBLs is limited due to the severe band bending of the EBL caused by strong electrostatic fields and low effective energy height [18]. Studies have also shown that inserting a superlattice EBL layer is conducive to the blue LEDs of InGaN materials [19][20][21], but there have been fewer studies on the superlattice EBL of deep UV LEDs. This study investigates different Al mole compositions of conventional EBL as they affect the performance of the optical device, then replaces the conventional EBL with a superlattice EBL, Simulation results show the performance of the deep UV LED with superlattice EBL improves tremendously.…”

Sheet Charge Engineering Towards an Efficient Hole Injection in 290 nm Deep Ultraviolet Light-Emitting Diodes

“…In addition, some researchers found that by taking advantage of the tunneling process, the conventional thermionic emission process limited by the potential barrier can be bypassed and thus the hole injection efficiency can be boosted effectively [12], [24], [25]. Furthermore, we reported that the hole injection of blue LEDs can be boosted by introducing a series of shallow wells in the valence band with an InGaN/GaN superlattice layer [26]. There have also been reports on the AlGaN/AlGaN superlattice insertion layer in the DUV LEDs [27]- [29].…”