Enhanced performance of InGaN/GaN multiple quantum well solar cells with double indium content

Abstract

The performance of a multiple quantum well (MQW) InGaN solar cell with double indium content is investigated. It is found that the adoption of a double indium structure can effectively broaden the spectral response of the external quantum efficiencies and optimize the overall performance of the solar cell. Under AM1.5G illumination, the short-circuit current density (Jsc) and conversion efficiency of the solar cell are enhanced by 65% and 13% compared with those of a normal single-indium-content MQW solar cell. These improvements are mainly attributed to the expansion of the absorption spectrum and better extraction efficiency of the photon-generated carriers induced by higher polarization.

Comparision between Ga- and N-polarity InGaN solar cells with gradient-In-composition intrinsic layers

“…As one of the most important ternary alloys in IIInitrides, In x Ga 1−x N (InGaN) has a very high absorption coefficient (10 5 cm −1 ), high carrier mobility, high radiation resistance and high adjustability for direct band gap ranging from 0.63 eV to 3.4 eV, which makes its absorption cover the wavelength range from 365 nm to 1770 nm (almost the entire solar spectrum), it has become one of the important candidates for preparing photovoltaic devices. [1][2][3][4][5] Although InGaN solar cell (SC) structure has many advantages viewed from a materials point of view, there are many problems and challenges in the actual preparations of device structures. For example, to increase long wavelength absorption efficiency, In composition needs increasing to reduce the band gap of In-GaN.…”

Enhancement in solar hydrogen generation efficiency using InGaN photoelectrode after surface roughening treatment with nano-sized Ni mask

“…[3][4][5][6] Among them, InGaN epilayer is one of the most promising candidate for application due to its adjustable direct band gap perfectly matching the solar spectrum and stability in acidic/alkaline solution under sun light. [7][8][9][10] So far, some efforts have been done including nano-rod structure, electrochemical treatment, and so on. [11][12][13][14] There are still not enough research in InGaN-based photoelectrode.…”