2018
DOI: 10.1039/c8ta00583d
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Enhanced performance of perovskite solar cells via anti-solvent nonfullerene Lewis base IT-4F induced trap-passivation

Abstract: We have developed a new method to introduce defect passivation agents using an in situ technique for planar p–i–n perovskite solar cells, during the anti-solvent deposition step.

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Cited by 136 publications
(111 citation statements)
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“…The trap density in the hole‐only device prepared by the polymer containing anti‐solvent is calculated to be 1.45 × 10 16 cm −3 , which is lower than that of the hole‐only device prepared by the CB anti‐solvent, 1.91 × 10 16 cm −3 , suggesting that polymer passivation can reduce the defects. In the high voltage Child's region, the current density‐voltage curves can be fitted by using SCLC model: J=98ϵ0ϵrμV2L3 where J and V are the measured current density and applied voltage, normalϵ0normalϵnormalr is the permittivity of the component, µ is the charge carrier mobility and L is the thickness of perovskite layer. The hole‐only devices prepared by the polymer containing anti‐solvent have a hole mobility of 9.75 × 10 −3 cm 2 V −1 s −1 , which is higher than that of the hole‐only devices prepared by the CB anti‐solvent, 7.67 × 10 −3 cm 2 V −1 s −1 .…”
Section: Resultsmentioning
confidence: 99%
“…The trap density in the hole‐only device prepared by the polymer containing anti‐solvent is calculated to be 1.45 × 10 16 cm −3 , which is lower than that of the hole‐only device prepared by the CB anti‐solvent, 1.91 × 10 16 cm −3 , suggesting that polymer passivation can reduce the defects. In the high voltage Child's region, the current density‐voltage curves can be fitted by using SCLC model: J=98ϵ0ϵrμV2L3 where J and V are the measured current density and applied voltage, normalϵ0normalϵnormalr is the permittivity of the component, µ is the charge carrier mobility and L is the thickness of perovskite layer. The hole‐only devices prepared by the polymer containing anti‐solvent have a hole mobility of 9.75 × 10 −3 cm 2 V −1 s −1 , which is higher than that of the hole‐only devices prepared by the CB anti‐solvent, 7.67 × 10 −3 cm 2 V −1 s −1 .…”
Section: Resultsmentioning
confidence: 99%
“…It follows that IEICO‐4F should ideally be located at the perovskite grain boundaries to facilitate intergrain charge transfer while preserving intragrain crystallinity. Since perovskite films are commonly grown from a dimethyl sulfoxide (DMSO)‐containing solvent mixture and require an antisolvent treatment to control crystallization, a convenient way to introduce IEICO‐4F into the perovskite layer is to add it to the antisolvent (chlorobenzene, in our case), and deposit the solution during the antisolvent treatment step; a process that is referred to as “loaded dripping strategy” in the literature . With this approach, the additive tends to reside at the perovskite grain boundaries .…”
Section: Summary Of the Photovoltaic Parameters Of Champion Maibr Andmentioning
confidence: 99%
“…During last decade, perovskite solar cells (PSCs) have attracted extensive attentions as one of the next generation photovoltaics, due to their unique merits such as the excellent optical absorption, long‐balanced carrier diffusion length, and easily low‐cost fabrication methods, and to date, the power conversion efficiencies (PCEs) over 24% have been achieved with a regular (n‐i‐p type) mesoporous structures . However, the regular mesoporous structure devices usually have several drawbacks, such as severe hysteresis effects, poor reproducibility, and requirements of processing at high temperature.…”
Section: Introductionmentioning
confidence: 99%