Rationally regulating the photogenerated carrier transfer behavior and band structure of TiO 2 through metal doping is an effective strategy for enhancing the photocatalytic activity in the removal of malodorous gas hydrogen sulfide (H 2 S). In this study, TiO 2 modified with the doping of Group IIIA metal ions (Al 3+ , Ga 3+ , and In 3+ ) was utilized as an efficient photocatalytic desulfurizer under ultraviolet irradiation. Among these samples, the 4% In-TiO 2 exhibited the best photocatalytic H 2 S removal efficiency of 100% for a duration of 120 min, nearly 3 times higher than that of commercial P25 TiO 2 . The UV−vis DRS and PL spectra demonstrated that the incorporation of Group-IIIA metal ions into TiO 2 resulted in the formation of a shallow acceptor level above the valence band in the energy band structure, which induced a slight redshift at the edge of the visible light absorption band and reduced the electron−hole recombination rate. In situ DRIFTS and DFT calculations revealed that the adsorption and activation of H 2 S occurred simultaneously on In-TiO 2 , facilitated by its strong oxygen vacancy formation and adsorption capability. The ln 3+ doping into TiO 2 promoted photothermalcatalytic oxidation reaction on the surfaces of In-TiO 2 , thereby significantly enhancing the desulfurization efficiency of H 2 S. This study not only offers a deeper understanding of the regulated band structure of TiO 2 by doping of Group IIIA metal ions, but also provides a promising and green photocatalytic desulfurizer of In-TiO 2 for efficient removal of H 2 S.