2021
DOI: 10.1039/d0ra10420e
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Enhanced performance of ZnO nanorod array/CuSCN ultraviolet photodetectors with functionalized graphene layers

Abstract: Facile, convenient and low-cost processes were used to fabricate self-powered ZnO nanorod array ultraviolet photodetectors with CuSCN/rGO hole-transport bilayers. The device performance with a functionalized graphene layer was greatly improved.

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Cited by 30 publications
(20 citation statements)
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“…Moreover, the noise equivalent power (NEP, W Hz −1/2 ) and the specific detectivity (Dλ$D_\lambda ^*$, cm Hz 1/2 W −1 or Jones) represent the ability of PDs to detect weak light signals. The NEP is given by NEP = JnormalnRλ${\rm{NEP}}\; = \;\frac{{{J_{\rm{n}}}}}{{{R_\lambda }}}$, [ 2 ] where J n is the dark current noise spectral density, which mainly originates from the dark current density ( J dark ). [ 50 ] Thus, the specific detectivity Dλ$D_\lambda ^*$ can be derived from the NEP as Dλ = Rλ2qJdark$D_\lambda ^*\; = \;\frac{{{R_\lambda }}}{{\sqrt {2q{J_{{\rm{dark}}}}} }}$.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…Moreover, the noise equivalent power (NEP, W Hz −1/2 ) and the specific detectivity (Dλ$D_\lambda ^*$, cm Hz 1/2 W −1 or Jones) represent the ability of PDs to detect weak light signals. The NEP is given by NEP = JnormalnRλ${\rm{NEP}}\; = \;\frac{{{J_{\rm{n}}}}}{{{R_\lambda }}}$, [ 2 ] where J n is the dark current noise spectral density, which mainly originates from the dark current density ( J dark ). [ 50 ] Thus, the specific detectivity Dλ$D_\lambda ^*$ can be derived from the NEP as Dλ = Rλ2qJdark$D_\lambda ^*\; = \;\frac{{{R_\lambda }}}{{\sqrt {2q{J_{{\rm{dark}}}}} }}$.…”
Section: Resultsmentioning
confidence: 99%
“…Ultraviolet photodetectors (UV PDs) have a wide range of applications in environmental sensors, image sensors, and secure communications, which convert short‐wavelength light less than 400 nm (UV‐A band 320–400 nm) into electrical signals. [ 1–3 ] Titanium dioxide (TiO 2 ), with an appropriate bandgap (3.0–3.2 eV), [ 4 ] high carrier mobility (≈39 cm 2 V −1 s −1 ), [ 5 ] and non‐toxicity, has been considered as an ideal active material for UV‐A PD applications. [ 6,7 ] Meanwhile, the construction of ultrahigh‐performance photodetectors based on a 1D structure with Schottky junction has attracted much attention.…”
Section: Introductionmentioning
confidence: 99%
“…To illustrate the outstanding performance of the TiO 2 /ZnO/Ag-based PEC photodetector, we compared the photodetectors with the previously reported photodetectors, as displayed in Figure . The TiO 2 /ZnO/Ag PEC-type photodetector showed a much higher responsivity (4.90 × 10 2 and 7.32 × 10 2 mA/W) than the TiO 2 or TiO 2 nanostructure-based PEC-type photodetector.…”
Section: Resultsmentioning
confidence: 99%
“…Note that the R and D * values obtained in this study are superior to those in previous studies using solution process-based PDs. [27,[33][34][35][36][37][38][39] A detailed comparison of such performance is in Table S2, Supporting Information.…”
Section: Resultsmentioning
confidence: 99%