Enhanced performances of a-IGZO TFTs with oxide passivation layers fabricated by hollow cathode assisted PLD

High-performance sol–gel processed a-IGZO TFTs with low-melting point metal electrodes

“…7 However, the performance of a-IGZO TFTs prepared by sol-gel method has been lower than the requirements for practical application. Various methods to improve the performance and reliability of a-IGZO TFTs have been considerably investigated, involving contact engineering, [8][9][10][11][12] composition optimization, [13][14][15][16][17][18][19] passivation, [20][21][22][23] and dielectric layer design. [24][25][26][27] Contact engineering has been widely considered as a simple, effective, and highly compatible strategy.…”

Self-Powered InGaZnO Ozone Gas Sensors Based on a Metal–Semiconductor–Metal Structure with Asymmetric Interdigitated Electrodes

“…Amorphous oxide semiconductors (AOS) have emerged as highly promising candidates for next-generation thin-film transistors (TFTs), particularly in applications involving display backplanes. − Among these materials, amorphous InGaZnO (a-IGZO) stands out as a leading choice due to its exceptional properties, such as high electron mobility, excellent optical transparency, and room temperature deposition . Recent efforts have explored new functionalities for a-IGZO, particularly in the applications of chemiresistive gas sensors. , The unique characteristics of a-IGZO, characterized by its lack of grain boundaries and small grain size, make it particularly well-suited for sensing trace amounts of gases such as NO 2 , O 3 , and H 2 …”