Enhanced Performances of AlGaN/GaN Ion-Sensitive Field-Effect Transistors Using H&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;2&lt;/sub&gt;-Grown Al&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt; for Sensing Membrane and Surface Passivation Applications

Liu, Han-Yin; Hsu, Wei‐Chou; Lee, Ching-Sung; Chou, Bo-Yi; Chen, Wei-Fan

doi:10.1109/jsen.2015.2390641

Cited by 21 publications

(6 citation statements)

References 28 publications

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“…A wider 'g m ' profile indicates an enhanced linear behavior in the device, resulting in reduced inter-modulation distortion, lower phase noise, and a higher dynamic range [9]. Moreover, g m is evaluated as follows [38,39]: Figure 11 demonstrates the output conductance (g d ) characteristics with V DS at V GS = 2 V for various neutral biomolecules embedded in the nanocavity region. Usually, g d has been considered an essential parameter in determining a device sensitivity.…”

Section: Resultsmentioning

confidence: 99%

Sensitivity improvement in gate engineered technique dielectric modulated GaN MOSHEMT with InGaN notch for label-free biosensing

Mishra,

Mohankumar,

Singh

2024

Eng. Res. Express

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This paper focuses on the impact of gate-engineered dielectric-modulated GaN MOSHEMT with InGaN notch on sensitivity enhancement for label-free biosensing. The novelty of this study utilizes the charge-plasma effect induced by the dual metal gate (DMG) technology adopted to realize the effect of sensitivity on different biomolecules. Moreover, the presence of an InGaN notch enhances carrier confinement in the 2DEG, subsequently improving the threshold voltage and device sensitivity at the AlGaN/GaN interface. The maximum drain current, IDS of 4.602 A/mm, transconductance, gm of 18 mS/mm, and sensitivity has been improved by around 61% for the Uricase biomolecule by introducing the dual metal gate technology. The work function difference of the two metal gates suppresses the Short Channel Effects (SCEs) and hot carrier effects in DMG MOSHEMT, thereby screening the drain potential variations by the gate near the drain. In addition, increased carrier transport efficiency results from a more consistent electric field along the channel. All the simulations are carried out using the Sentaurus TCAD simulator, and the results imply the feasibility of gate-engineered GaN MOSHEMT for label-free biosensing.

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Section: Resultsmentioning

confidence: 99%

Sensitivity improvement in gate engineered technique dielectric modulated GaN MOSHEMT with InGaN notch for label-free biosensing

Mishra,

Mohankumar,

Singh

2024

Eng. Res. Express

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“…As shown in Figure 7, the sensitivity of these films was found to be 23.8 mV/pH with a significantly decreased linearity of 66.6%. It has been noted in the literature that oxidation of Al2O3 films can improve pH sensing performance [11]. Thus, the sensors were subjected to 30 sec O2 plasma at 50 W before another round of testing.…”

Section: Resultsmentioning

confidence: 99%

Mattress-Based Sweat Monitoring for Human Health Monitoring and Smart Homes

Pavlidis¹,

Tsai²,

Jin³

et al. 2018

2018 Solid-State, Actuators, and Microsystems Workshop Technical Digest

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Mattress-based sweat sensing systems can provide nonintrusive, continuous health monitoring. Commercialization of physical sensors in beds has already been achieved, while chemical sensing within the same platform is still in its infancy. We describe our approach towards the development of flexible potentiometric sensors and demonstrate low-temperature fabrication of these devices. Three commonly used mattress fabrics have been contrasted as sweat capture layers, leading to pH sensing with a sensor embedded within the hydrophilic fabric. It is found that noise, sensitivity and linearity can be affected by the rate of liquid flow, temperature of the Al2O3 deposition and stability of the thin film Ag/AgCl reference electrode realized on-chip.

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“…The drift effect is mainly explained as modifications occurring at the surface or in the bulk of the sensing layer due to the penetration of water molecules and water-related species. − Silicon dioxide (SiO 2 ), the most common gate insulator used in Si MOS devices, is not suitable for an ISFET due to its high permeation to water, leading to large drift rates and huge errors in pH reading. Thereafter, other more robust insulators have been explored as the sensing material of ISFETs, such as Al 2 O 3 , Si 3 N 4 , Ta 2 O 5 , HfO 2 , SnO 2 , etc., − showing significant improvements as compared to SiO 2 . However, those improvements are still insufficient to reduce the drift rate to an acceptable level.…”

Section: Introductionmentioning

confidence: 92%

Low Drift Reference-less ISFET Comprising Two Graphene Films with Different Engineered Sensitivities

Zeng

Wei

et al. 2022

ACS Appl. Electron. Mater.

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We have engineered pH sensitivity of graphene-based ion-sensitive field-effect transistors (ISFETs) by applying plasma treatment on graphene with two different plasma sources, CF4 and O2 plasma. The CF4 plasma treatment, leaving F-terminated sites on graphene, results in a lower sensitivity of 23 mV/pH, while the O2 plasma treatment, leaving O-terminated sites, results in a higher sensitivity of 40 mV/pH. The validity of the aforementioned plasma treatments on graphene was confirmed by Raman spectra and X-ray photoelectron spectroscopy (XPS). Both plasma-treated graphene samples exhibit good stability with low drift and a small hysteresis width in measuring the pH of the solution, resulting from the two-dimensional (2D) feature of graphene. Finally, a reference-less ISFET that comprises two graphene films with different engineered sensitivities was demonstrated. Both engineered graphene films are directly exposed to the electrolyte solution, with the CF4-treated graphene replacing the reference electrode and the O2-treated graphene as the sensing layer. As surface potentials of the two films are opposite in sign, this device exhibits an overall sensitivity as the difference in sensitivities (i.e., 14.5 mV/pH) of the two individual films. More importantly, the long-term drift behaviors of the two films also cancel each other and the drift rate reaches as low as 0.38 mV/h for this reference-less device. This approach brings opportunities for future high-performance 2D-based ISFETs with extremely low drift and high stability.

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Enhanced Performances of AlGaN/GaN Ion-Sensitive Field-Effect Transistors Using H<sub>2</sub>O<sub>2</sub>-Grown Al<sub>2</sub>O<sub>3</sub> for Sensing Membrane and Surface Passivation Applications

Cited by 21 publications

References 28 publications

Sensitivity improvement in gate engineered technique dielectric modulated GaN MOSHEMT with InGaN notch for label-free biosensing

Sensitivity improvement in gate engineered technique dielectric modulated GaN MOSHEMT with InGaN notch for label-free biosensing

Mattress-Based Sweat Monitoring for Human Health Monitoring and Smart Homes

Low Drift Reference-less ISFET Comprising Two Graphene Films with Different Engineered Sensitivities

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