Enhanced photo-response performance of Cu₂O-based graded heterojunction optoelectronic devices with a Ga₂O₃ buffer layer

Abstract

Cuprous oxide (Cu2O) has been widely investigated in optoelectronic devices because of its non-toxicity, high optical absorption coefficient, intrinsic p-type conductivity, and high hole mobility. However, misaligned energy levels remain...

Electron Transfer Mechanism and Nonlinear Optical Properties of Ga2O3/MoS2 Nanoheterostructures: Implications for Optoelectronic Devices

“…Ga 2 O 3 has the advantages of enhancing charge transport efficiency, improving the photoresponse ability of raw materials, and broadening the response range of the ultraviolet–visible spectrum. , Ga 2 O 3 is a promising new type of ultra wide band gap semiconductor with a band gap of 4.5–4.9 eV . Of the five most common phases of Ga 2 O 3 (α, β, γ, δ, and ε), β-Ga 2 O 3 (monoclinic structure) is the most thermally stable material and belongs to the category of indirect semiconductors.…”

Deep Ultraviolet Photodetector with Ultrahigh Responsivity based on a Nitrogen‐Doped Graphene‐Modified Polypyrrole/SnO2 Organic/Inorganic p–n Heterojunction

“…Due to challenges in the synthesis of high‐quality p‐type SnO 2 , SnO 2 ‐based heterojunction PDs are often constructed with other p‐type materials, including NiO, Cu 2 O, and p‐GaN. [ 15–17 ] However, the large lattice mismatch between these inorganic materials and SnO 2 results in a high dark current not conducive to precise detection. The emergence of organic p‐type materials provides new options.…”

“…Due to challenges in the synthesis of high-quality p-type SnO 2 , SnO 2 -based heterojunction PDs are often constructed with other p-type materials, including NiO, Cu 2 O, and p-GaN. [15][16][17] However, the large lattice mismatch between these inorganic materials and SnO 2 results in a high dark current not Deep ultraviolet monitoring is realized via a high crystal quality SnO 2 microwire (MW)-based photodetector (PD). This is then combined with 2D nitrogen-doped graphene (NGr), conducting polymer polypyrrole (PPy), and an in situ polymerization-fabricated composite film PPy-NGr to construct an organic-inorganic p-n heterojunction PD.…”

Solar-blind photodetectors prepared using semi-insulating Co:β-Ga2O3 single crystals that are stable over a wide temperature range

“…19,20 Hence, high-resistivity, or semi-insulating (SI), single crystals are necessary for β-Ga 2 O 3 -based photodetectors that are intended for use in high-temperature and other extreme environments, and the material deterioration of β-Ga 2 O 3 at elevated temperature might be suppressed using optimized SI crystals. 21…”

“…19,20 Hence, highresistivity, or semi-insulating (SI), single crystals are necessary for b-Ga 2 O 3 -based photodetectors that are intended for use in hightemperature and other extreme environments, and the material deterioration of b-Ga 2 O 3 at elevated temperature might be suppressed using optimized SI crystals. 21 For b-Ga 2 O 3 bulk single crystals, conducting, SI, and unintentionally doped (UID) crystals can be grown using the edge-defined film-fed growth (EFG), Czochralski (CZ), Bridgman, and floating zone (FZ) methods. [22][23][24] Conducting b-Ga 2 O 3 crystals could be obtained by doping with shallow donor impurities, such as Si, Ge, and Sn, 22,25 whose free-electron concentrations are in the range of 10 17 -10 19 cm À3 .…”