2020
DOI: 10.1080/02670844.2020.1801143
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Enhanced photocatalytic activity of Mg-doped ZnO thin films prepared by sol–gel method

Abstract: Undoped ZnO and Mg-doped ZnO (MZO) thin films were synthesized by sol-gel dip-coating technique. The effect of Mg dopant on the structural, surface-morphological, and optical properties together with the photocatalytic activities of the films was studied. Morphological study shows that incorporation of Mg increases the porosity of the films. Structural investigation reveals that Mg doping declines the crystallinity of the films. The optical analysis demonstrates that the Urbach energy of the films increases du… Show more

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Cited by 38 publications
(21 citation statements)
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“…The increase of Urbach energy also suggests that the incorporation of GO introduces localized states within the forbidden energy bandgap [48]. The presence of such localized states may also act as trap center for charge carriers and can favor the photocatalytic degradation process [48,49].…”
Section: Optical Propertiesmentioning
confidence: 97%
“…The increase of Urbach energy also suggests that the incorporation of GO introduces localized states within the forbidden energy bandgap [48]. The presence of such localized states may also act as trap center for charge carriers and can favor the photocatalytic degradation process [48,49].…”
Section: Optical Propertiesmentioning
confidence: 97%
“…The increase in band-gap can be linked to the fact that new defects are inserted after Mg 2+ substitute for Zn 2+ , owing to the electronegativity and ionic radius differences between Mg and Zn, there are more electrons shared by Mg dopant related to the lower electron affinity of MgO compared to ZnO. This causes a shift of the Fermi level inside the conduction band in the case of Mg-doped ZnO, or because of the wide band-gap of MgO comparing to ZnO [6,16]. These results make our deposited films candidates for use in optoelectronics, photovoltaics and multiple optical applications although this is not the focus of the present study.…”
Section: %) Filmsmentioning
confidence: 99%
“…So far, a number of metal atoms, including, Al, Co, Mn, Ag, Fe, Mg, etc. [16] in the form of dopants were introduced into the ZnO crystal lattice to substitute Zn. An improvement in the doping technology of ZnO by Mg [17] has promoted many new applications in electronics and ultraviolet optoelectronic devices.…”
Section: Introductionmentioning
confidence: 99%
“…It is known that optical properties of semiconductor thin films depend on the deposition method [9,10]. Currently, various methods are used to obtain ZnO thin films: radio frequency (RF) or direct current sputtering, spray pyrolysis, spin coating, metal organic chemical vapor deposition and pulsed laser deposition [5][6][7][9][10][11][12][13][14][15][16][17][18][19].…”
Section: Introductionmentioning
confidence: 99%
“…Doping of zinc oxide thin films results in different changes of physical properties. In most cases, doping of thin films results in an increase in the band gap value [11][12][13][15][16][17][18][19][20][21][22] caused by the influence of the Burstein-Moss effect [20][21][22] and increased contribution of defects [21] (Zn, O vacancies). In several studies [23][24][25][26], doping with different chemical elements leads to a decrease in the band gap, or the value of the band gap remains almost independent of doping.…”
Section: Introductionmentioning
confidence: 99%