Enhanced photocurrent in InGaN/GaN MQWs solar cells by coupling plasmonic with piezo-phototronic effect

Jiang, Chunyan; Chen, Yan; Sun, Jiangman; Liang, Jing; Liu, Mengmeng; Liu, Ting; Pan, Yan; Pu, Xiong; Ma, Bei; Hu, Weiguo; Wang, Zhong Lin

doi:10.1016/j.nanoen.2018.12.036

Cited by 38 publications

(21 citation statements)

References 36 publications

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“…It can be found from Figure c that as the procession distance increases (indicating the external stress increasing), the I ds gradually reduces, which is closely related to the 2DEG at AlGaN/GaN heterojunction modulated by the piezotronic effect. The piezotronic effect modulation mechanism has been discussed before. , The external stress causes negative piezoelectric charge accumulating at the heterojunction interface, thus the energy band on the GaN side is raised, resulting the triangular potential well at the heterojunction interface to become shallow. The concentration of 2DEG decreases, thereby reducing the saturated current of the HEMTs device …”

Section: Resultsmentioning

confidence: 99%

Piezotronic Effect Modulated Flexible AlGaN/GaN High-Electron-Mobility Transistors

et al. 2019

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Flexible electronic technology has attracted great attention due to its wide range of potential applications in the fields of healthcare, robotics, and artificial intelligence, etc. In this work, we have successfully fabricated flexible AlGaN/GaN high-electron-mobility transistors (HEMTs) arrays through a low-damage and wafer-scale substrate transfer technology from a rigid Si substrate. The flexible AlGaN/GaN HEMTs have excellent electrical performances with the I d,max achieving 290 mA/mm at V gs = +2 V and the g m,max reaching to 40 mS/mm. The piezotronic effect provides a different freedom to optimize device performances, and flexible HEMTs can endure the larger mechanical distortions. Based on the piezotronic effect, we applied an external stress to significantly modulate the electrical performances of flexible HEMTs. The piezotronic effect modulated flexible AlGaN/GaN HEMTs exhibit great potential in human-machine interface, intelligent microinductor systems, and active sensors, etc, and introduce an opportunity to sensing or feedback external mechanical stimuli and so on.

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Section: Resultsmentioning

confidence: 99%

Piezotronic Effect Modulated Flexible AlGaN/GaN High-Electron-Mobility Transistors

et al. 2019

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“…[150] The BaTiO 3 nanocavity arrays loaded with Al nanoparticles on flexible Ti foam [151] exhibited piezo-photocatalytic H 2 generation rate of 657 µmol h −1 cm −2 under UV-vis light illumination with the assistance of ultrasonic vibration (Figure 16f,g) which is much more practical compared with Au and Ag. [152,153]…”

Section: Hybrid Piezo-photocatalystsmentioning

confidence: 99%

Piezocatalysis and Piezo‐Photocatalysis: Catalysts Classification and Modification Strategy, Reaction Mechanism, and Practical Application

Guo

Zhang

et al. 2020

Adv Funct Materials

601

320

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Piezoelectric-based catalysis that relies on the charge energy or separation efficiency of charge carriers has attracted significant attention. The piezo-potential induced by strain or stress can induce a giant electric field, which has been demonstrated to be an effective means for charge energy shifting or transferring electrons and holes. In recent years, intense efforts have been made in this subject, and the research has mainly focussed on two aspects: i) Alteration of surface charge energy by piezo-potential in piezocatalysis; ii) the separation of photo-generated charge carriers and the catalytic activity enhancement of an integrated piezoelectric semiconductor or coupled system composed of piezoelectrics and semiconductors. Systematically summarizing the advances of the above two aspects is helpful in the context of deepening understanding of the relevant issues and developing new ideas for piezoelectric-based catalysis. In this review, a comprehensive summary on piezocatalysis and piezo-photocatalysis is provided. The charge transfer behaviors and catalytic mechanisms over a large variety of piezocatalysts and piezo-photocatalysts are systematically analyzed. In addition, the types of mechanical energy, strategies for enhancing piezocatalysis, and the advanced applications of piezocatalysis and piezophotocatalysis are discussed. Finally, the promising development directions of piezocatalysis and piezo-photocatalysis, such as materials, assembly forms, and applications in the future are proposed.

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“…proposed a GaN solar cell incorporating not only with Ag plasmonic particles but also with piezo‐phototronic effect. [ 64 ] The device showed a 40% larger short current as well as a 60% enhancement in the energy conversion efficiency, demonstrating that piezo‐phototronic effect could effectively modify the generation, transporting, and recombination of carriers. The work gives a new prospect of the GaN‐based solar cells to be applied in soft and wearable devices.…”

Section: Surface Plasmonsmentioning

confidence: 99%

Progress of GaN‐Based Optoelectronic Devices Integrated with Optical Resonances

Zhao

Liu

Wang

2022

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are even smaller, only a few MHz, which are far away from the requirement of fast and large data wireless transmission for VLC. [5] To enhance the data transmission rates, complex modulation schemes and/ or equalization have to be utilized, which, however, hinder the further developments and applications. In addition, Si-based optoelectronic devices, like Si PDs, a bluefiltering technology are still used currently for shorter wavelength visible light detection, which suffers from complexity and low light transmittance. Furthermore, considering the development and mature application of GaN-based devices, there is a trend to realize the multifunctional single chip integration. However, the relative low coupling efficiency in the GaNbased optoelectronic devices still cannot meet the requirements. In this case, it is important to develop novel GaN-based optoelectronic devices with superior performances as alternative for miniaturization, simplification, and integration. To solve these problems, the concept of incorporating GaN-based devices with exotic optical resonances has been proposed. [5] Surface plasmons (SPs), microcavities, such as whispering gallery modes (WGMs) and distributed Bragg reflectors (DBR) are common optical resonant structures to improve the performances of GaN-based devices. [6][7][8][9] SPs are intrinsic electromagnetic modes excited at the metal-dielectric interfaces, accompanied with the collective oscillation behaviors of free electrons on the metal-side surfaces. [10] Giant electric field enhancement generates at the interface with exponentially decay along the perpendicular direction. Inside the GaN-based devices, the excitation of SPs can greatly enhance the density of states of the electron-hole pairs and improve the competitiveness of the radiative recombination to the non-radiative recombination. [11] It has also been demonstrated tremendously in early works that using SPs enables a path to break the optical diffraction limit of the semiconductor lasers and boost the light-matter coupling intensities in subwavelength dimensions. [11][12][13][14][15][16][17] In addition, GaN-based microcavities, such as photonics crystals, DBR, and micro disks, can confine and manipulate light. [18][19][20] By matching one or more dimensions of the cavities to the wavelength of the confined light, exotic effects can be produced, such as enhanced luminescence, directional emission, low-threshold lasing, etc. When light illuminates microcavities, the confined electron-hole pairs interact with the cavity photons. Their interaction rate relative to the average Being direct wide bandgap, III-nitride (III-N) semiconductors have many applications in optoelectronics, including light-emitting diodes, lasers, detectors, photocatalysis, etc. Incorporation of III-N semiconductors with high-efficiency optical resonances including surface plasmons, distributed Bragg reflectors and micro cavities, has attracted considerable interests for upgrading their performance, which can not only reveal the new coupling mechanism...

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Enhanced photocurrent in InGaN/GaN MQWs solar cells by coupling plasmonic with piezo-phototronic effect

Cited by 38 publications

References 36 publications

Piezotronic Effect Modulated Flexible AlGaN/GaN High-Electron-Mobility Transistors

Piezotronic Effect Modulated Flexible AlGaN/GaN High-Electron-Mobility Transistors

Piezocatalysis and Piezo‐Photocatalysis: Catalysts Classification and Modification Strategy, Reaction Mechanism, and Practical Application

Progress of GaN‐Based Optoelectronic Devices Integrated with Optical Resonances

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