Enhanced photoelectric performance of GaN-based Micro-LEDs by ion implantation

Liu, Shaogang; Han, Sancan; Xu, Chenchao; Xu, Huiwen; Wang, Ding; Zhu, Yuankun

doi:10.1016/j.optmat.2021.111579

Cited by 10 publications

(5 citation statements)

References 43 publications

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Section: Effective Passivation Of Sidewall Surfacementioning

confidence: 99%

Recent advances in micro-pixel light emitting diode technology

Park,

Pristovsek,

Amano

et al. 2024

Applied Physics Reviews

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Display technology has developed rapidly in recent years, with III–V system-based micro-light-emitting diodes (μLEDs) attracting attention as a means to overcome the physical limitations of current display systems related to their lifetime, brightness, contrast ratio, response time, and pixel size. However, for μLED displays to be successfully commercialized, their technical shortcomings need to be addressed. This review comprehensively discusses important issues associated with μLEDs, including the use of the ABC model for interpreting their behavior, size-dependent degradation mechanisms, methods for improving their efficiency, novel epitaxial structures, the development of red μLEDs, advanced transfer techniques for production, and the detection and repair of defects. Finally, industrial efforts to commercialize μLED displays are summarized. This review thus provides important insights into the potential realization of next-generation display systems based on μLEDs.

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Section: Effective Passivation Of Sidewall Surfacementioning

confidence: 99%

Recent advances in micro-pixel light emitting diode technology

Park,

Pristovsek,

Amano

et al. 2024

Applied Physics Reviews

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“…QCSE also causes wavelength shift and efficiency drop with increasing injection current density. The applications of the semipolar (20)(21) and (20-2-1) epitaxial structures have been proven to effectively suppress the effects of QCSE [46]. Semipolar devices enable higher modulation bandwidths due to weak polarization fields and flat energy gap distributions, which lead to larger electron-hole wavefunction overlap reducing carrier lifetimes [47].…”

Section: Vlc Applications With Qd-based Color-conversion μLedsmentioning

confidence: 99%

Full-Color Micro-LED Devices Based on Quantum Dots

Wu¹,

Lu²,

Yeh³

et al. 2023

Light-Emitting Diodes - New Perspectives

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Quantum dots (QDs) show remarkable optical and electrical characteristics. They offer the advantage of combining micro-LEDs (μLEDs) for full-color display devices due to their exceptional features. In addition, μLED used in conjunction with QDs as color-conversion layers also provide efficient white LEDs for high-speed visible light communication (VLC). In this article, we comprehensively review recent progress in QD-based μLED devices. It includes the research status of various QDs and white LEDs based on QDs’ color conversion layers. The fabrication of QD-based high-resolution full-color μLEDs is also discussed. Including charge-assisted layer-by-layer (LbL), aerosol jet printing, and super inkjet printing methods to fabricate QD-based μLEDs. The use of quantum dot photoresist in combination with semipolar μLEDs is also described. Finally, we discuss the research of QD-based μLEDs for visible light communication.

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“…Different types of ions have been employed to enhance specific applications. Argon ion implantation has been utilized to create a nano-air void structure on both GaN layers and sapphire substrates. , Fluorine ions have been employed to induce a high density of free holes in the near-surface layer of GaN, proving beneficial for micro-LED applications by isolating the emitting area and improving electronic properties. , N ion implantations have found applications in transferring GaAs into a GaN nanolayer, epitaxial lateral overgrowth processes, current block layer formation, and GaN sidewall treatment . Ion sources such as Co, Fe, Ni, and O have been utilized to investigate their implantation defect profiles in GaN. , Ion implantation processes have also been employed in resonant-cavity LEDs (RC-LEDs) and vertical-cavity surface-emitting lasers (VCSELs).…”

Section: Introductionmentioning

confidence: 99%

“…9,10 N ion implantations have found applications in transferring GaAs into a GaN nanolayer, 11 epitaxial lateral overgrowth processes, 12 current block layer formation, 13 and GaN sidewall treatment. 14 Ion sources such as Co, Fe, Ni, and O have been utilized to investigate their implantation defect profiles in GaN. 15,16 Ion implantation processes have also been employed in resonant-cavity LEDs (RC-LEDs) and verticalcavity surface-emitting lasers (VCSELs).…”

Section: Introductionmentioning

confidence: 99%

Nanoporous Nitrogen-Ion-Implanted InGaN Resonant-Cavity Light-Emitting Diodes for Vertical-Cavity Surface-Emitting Lasers

Shiu,

Wang,

et al. 2024

ACS Appl. Nano Mater.

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InGaN resonant-cavity light-emitting diodes (RC-LEDs) with a dielectric distributed Bragg reflector (DBR), a porous-GaN DBR, and a nitrogen ion (N + )-implanted aperture (6 μm diameter) were demonstrated. In the ion implantation process, the N + ions were penetrated directly through an indium-tin-oxide conductive layer and SiO 2 layer to form the insulated p-GaN:Mg layer, which provides a fascinating current confinement structure. The broadened electroluminescence (EL) peaks were measured at 401.5 and 435.8 nm in the implanted LED without double DBR structures. Multiple EL emission peaks with narrow line widths were observed in the RC-LED structure, indicating a strong resonant effect with different cavity modes. Two groups of effective resonant-cavity lengths, 1.48 and 1.50 μm, were analyzed through the angle-resolved EL spectra due to the anisotropic porous-GaN layers in the porous DBR structure. The divergent angles in far-field EL radiation patterns were reduced from 118°for the nontreated LED to 28°for the RC-LED structures. A high resonant-cavity effect, line-width narrowing phenomenon, and small divergent angle were observed in the InGaN RC-LED with 6 μm-diameter ion-implanted aperture and top dielectric/bottom porous DBR structures.

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Enhanced photoelectric performance of GaN-based Micro-LEDs by ion implantation

Cited by 10 publications

References 43 publications

Recent advances in micro-pixel light emitting diode technology

Recent advances in micro-pixel light emitting diode technology

Full-Color Micro-LED Devices Based on Quantum Dots

Nanoporous Nitrogen-Ion-Implanted InGaN Resonant-Cavity Light-Emitting Diodes for Vertical-Cavity Surface-Emitting Lasers

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