Enhanced photoelectrochemical performance of atomic layer deposited Hf-doped ZnO

Alfakes, Boulos; Garlisi, Corrado; Villegas, Juan Esteban; Al-Hagri, Abdulrahman; Tamalampudi, Srinivasa Reddy; Rajput, Nitul S.; Lu, Jin-You; Lewin, Erik; Sá, Jacinto; Almansouri, Ibraheem; Palmisano, Giovanni; Chiesa, Matteo

doi:10.1016/j.surfcoat.2020.125352

Cited by 27 publications

(10 citation statements)

References 91 publications

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“…137 Among them, ALD technology has attracted a lot of attention because ALD allows control of the atomic thickness, stoichiometric ratio, conformality, and high-density film growth. 138 Based on the advantages of ALD technology, many researchers have developed passivated layer deposited photoelectrode materials based on ALD technology. Some studies have used ALD technology to deposit the Al 2 O 3 layer onto TiO 2 nanorods coupled with SiP quantum dots (QDs) to obtain SiP QDs/TiO 2 NRs/Al 2 O 3 .…”

Section: Surface Modificationmentioning

confidence: 99%

Advances and challenges in the modification of photoelectrode materials for photoelectrocatalytic water splitting

Yang,

Li,

Xiang

2024

Mater. Horiz.

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Section: Surface Modificationmentioning

confidence: 99%

Advances and challenges in the modification of photoelectrode materials for photoelectrocatalytic water splitting

Yang,

Li,

Xiang

2024

Mater. Horiz.

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“…38 Additionally, various strategies have been employed to improve the WS process and hydrogen evolution. 40 For example, the PEC or WS rate can be accelerated by widening the window of solar absorption range by means of bandgap engineering (doping), 41 stacking of heterojunction semiconductors, 42 or using plasmonic material. 43 The large bandgap of GaN (3.4 eV) perfectly meets the requirements for the water redox process, and thus, it is considered as a potential candidate for a WS catalyst/electrode.…”

Section: Gan As a Water Splitting (Ws) Electrodementioning

confidence: 99%

A Review on Gallium Nitride for Liquid Sensors: Fabrications to Applications

Taha,

Anjum

2024

ACS Appl. Electron. Mater.

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Gallium nitride (GaN) exhibits high internal spontaneous and piezoelectric polarizations, leading to the formation of a two-dimensional electron gas (2DEG) channel in the heterojunctions. Additionally, its chemical stability, increased electron concentration, and high mobility contribute to its outstanding performance in applications, such as liquid sensing (LS). In this article, we review the sensitivity and reactivity of the GaN surface with polar liquids and aqueous solutions. A comprehensive understanding of the interaction between the GaN surface and water molecules is presented. The results from a myriad of characterization techniques are discussed at great length to elucidate the correlation between the reduction of GaN conductivity and the dissociation of water, which plays a key role in water splitting (WS) and LS applications of GaN. Finally, we present valuable conclusions drawn from theoretical and experimental studies conducted to determine GaN−water interfacial properties.

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“…This is because these elements have partially filled d-orbitals [14], which introduce additional energy levels within the bandgap of ZnO. These energy levels act as charge carriers, increasing the overall conductivity of the material [15,16]. Optical Properties, group 4 element doping can also influence the optical properties of ZnO.…”

Section: Introductionmentioning

confidence: 99%

“…Figure16. Variation of the current value against time when UV light switched on and off for films Zr-3 wt% , Zr-5 wt%, Zr-7 wt% and Zr−10 wt%.…”

mentioning

confidence: 99%

Properties of spray pyrolysis deposited Zr-doped ZnO thin films and their UV sensing properties

Alasmari,

Abd-Elraheem,

Aboud

et al. 2024

Phys. Scr.

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This study investigated the characteristics of Zr-doped ZnO thin films with varying Zr doping concentrations. X-ray diffraction (XRD) analysis confirmed the presence of the ZnO hexagonal phase without any additional phases detected. The crystallite size was determined using Scherrer’s equation and Halder-Wagner equation, revealing distinct trends as the Zr content increased. The impact of Zr doping concentration on structural properties such as lattice parameters was also explored. Field emission scanning electron microscopy (FESEM) images indicated agglomeration, with a peak value observed at Zr-5wt% of 175 nm that decreased at higher Zr contents. Optical properties exhibited minor variations with increasing Zr content, with the maximum band gap recorded at 3.28 eV for Zr-7wt% and Zr-10wt% films. Utilizing the Spitzer-Fan model, the high-frequency dielectric constant peaked at 14.26 for Zr-7wt% films. Optical mobility displayed fluctuations with rising Zr content. Direct current (DC) conductivity results unveiled two donor levels in the deposited films, showcasing minimum activation energies of 0.23 and 0.165 eV for high and low-temperature ranges in the Zr-3wt% film. Furthermore, the response to UV light illumination at a wavelength of 365 nm was examined, revealing notable changes in rise and decay times with varying Zr content. Overall, this comprehensive analysis sheds light on the intricate interplay between Zr doping concentrations and the physical properties of ZnO thin films, offering valuable insights for potential applications in various technological fields.

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Enhanced photoelectrochemical performance of atomic layer deposited Hf-doped ZnO

Cited by 27 publications

References 91 publications

Advances and challenges in the modification of photoelectrode materials for photoelectrocatalytic water splitting

Advances and challenges in the modification of photoelectrode materials for photoelectrocatalytic water splitting

A Review on Gallium Nitride for Liquid Sensors: Fabrications to Applications

Properties of spray pyrolysis deposited Zr-doped ZnO thin films and their UV sensing properties

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