1993
DOI: 10.1021/j100119a042
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Enhanced photoemission from short-wavelength photochemically etched porous silicon

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Cited by 30 publications
(13 citation statements)
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“…The n-type silicon samples were illuminated during the etch with a 300 W tungsten halogen lamp and the p-type silicon samples were illuminated with a 254 nm ultra-violet light source, which has previously been shown to produce highly luminescent samples [56]. The p-type wafers were allowed to soak in the etching solution at open circuit in the dark for an additional 10 min after the etch.…”
Section: Methodsmentioning
confidence: 99%
“…The n-type silicon samples were illuminated during the etch with a 300 W tungsten halogen lamp and the p-type silicon samples were illuminated with a 254 nm ultra-violet light source, which has previously been shown to produce highly luminescent samples [56]. The p-type wafers were allowed to soak in the etching solution at open circuit in the dark for an additional 10 min after the etch.…”
Section: Methodsmentioning
confidence: 99%
“…Both n-and p-type wafers were illuminated during the etching procedure [19] with a 300-W tungsten lamp adjusted to an intensity of approximately 100 mW cm À2 to produce luminescent samples. Porous silicon samples with areas of 0.25 cm 2 were etched in 48 % aqueous HF/EtOH (1/1) for 2 min at a current density of 40 mA cm À2 .…”
Section: Methodsmentioning
confidence: 99%
“…Porous silicon samples with areas of 0.25 cm 2 were etched in 48 % aqueous HF/EtOH (1/1) for 2 min at a current density of 40 mA cm À2 . Both n-and p-type wafers were illuminated during the etching procedure [19] with a 300-W tungsten lamp adjusted to an intensity of approximately 100 mW cm À2 to produce luminescent samples. The porous layers were approximately 3 ± 5 mm thick (determined by scanning electron microscopy).…”
Section: Methodsmentioning
confidence: 99%
“…On the other hand, it is observed that 700 nm light illumination used in the fabrication process has no effects on subsequent PL spectrum. Only short-wavelength irradiations have a significant effect on the photoluminescence and structural properties of PSi due to their short penetration depth [10].…”
Section: Introductionmentioning
confidence: 99%